AP4951GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D2
D2
▼ Low Gate Charge
D1
D1
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
SO-8
S1
S2
G1
BVDSS
-60V
RDS(ON)
96mΩ
ID
-3.4A
G2
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-60
V
+20
V
3
-3.4
A
3
-2.7
A
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201108034
AP4951GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-
-
V
-
-0.04
-
V/℃
VGS=-10V, ID=-3.4A
-
-
96
mΩ
VGS=-4.5V, ID=-2.7A
-
-
120
mΩ
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3.4A
-
3.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-3A
-
29.5
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
7
-
nC
VDS=-30V
-
11
20
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
10
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
39
80
ns
tf
Fall Time
RD=30Ω
-
10.5
20
ns
Ciss
Input Capacitance
VGS=0V
-
1320
-
pF
Coss
Output Capacitance
VDS=-25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
39
80
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
64
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4951GM-HF
40
30
-10V
-7.0V
-5.0V
-4.5V
30
-10V
-7.0V
-5.0V
-4.5V
o
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
V G =-3.0V
20
V G =- 3 .0V
10
10
0
0
0
2
4
6
8
0
10
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
100
I D = -2.7A
T A =25 ℃
I D = -3.4A
V G = -10V
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
90
80
1.2
0.8
0.4
70
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
10.00
1.6
8.00
-IS(A)
o
T j =25 o C
1.4
-VGS(th) (V)
T j =150
C
6.00
1.2
4.00
1
2.00
0.8
0.00
0.6
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4951GM-HF
f=1.0MHz
10000
I D = -3A
V DS = -48V
10
8
C iss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS = -5V
T j =25 o C
VG
T j =150 o C
-ID , Drain Current (A)
16
QG
-10V
12
QGS
QGD
8
4
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4