A-POWER AP50G60SW-HF

AP50G60SW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
C
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),[email protected]=33A
▼ Built-in Fast Recovery Diode
▼ RoHS Compliant & Halogen-Free
VCES
600V
IC
45A
C
G
C
TO-3P
E
G
E
Absolute Maximum Ratings
Symbol
Rating
Parameter
Units
VCES
Collector-Emitter Voltage
600
V
VGE
Gate-Emitter Voltage
+30
V
[email protected]=25oC
Collector Current
75
A
[email protected]=100oC
Collector Current
45
A
A
ICM
Pulsed Collector Current
150
[email protected]=25oC
Diode Forward Current
40
A
[email protected]=100oC
Diode Forward Current
15
A
[email protected]=25oC
Maximum Power Dissipation
300
W
TSTG
Storage Temperature Range
-55 to 150
o
TJ
Operating Junction Temperature Range
150
o
TL
Maximum Lead Temp. for Soldering Purposes
300
o
C
C
C
, 1/8" from case for 5 seconds .
Notes:
1.Pulse width limited by max. junction temperature .
Thermal Data
Parameter
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-Case
0.42
o
C/W
Rthj-c(Diode)
Thermal Resistance Junction-Case
1.5
o
C/W
Rthj-a
Thermal Resistance Junction-Ambient
40
o
C/W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
ICES
Collector-Emitter Leakage Current
VCE(sat)
Collector-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
Test Conditions
VGE=+30V, VCE=0V
Min.
-
Typ.
-
Max.
+100
Units
nA
VCE=600V, VGE=0V
-
-
500
uA
VGE=15V, IC=33A
-
2.6
3
V
VGE=15V, IC=50A
-
3.1
3.5
V
VCE=VGE, IC=250uA
2
-
6
V
Qg
Total Gate Charge
IC=33A
-
55
100
nC
Qge
Gate-Emitter Charge
VCE=400V
-
12
-
nC
Qgc
Gate-Collector Charge
-
27
-
nC
td(on)
Turn-on Delay Time
-
27
-
ns
tr
Rise Time
-
22
-
ns
td(off)
Turn-off Delay Time
-
110
-
ns
tf
Fall Time
VGE=15V
VCE=390V,
Ic=33A,
VGE=15V,
RG=5Ω,
Inductive Load
-
100
260
ns
Eon
Turn-On Switching Loss
-
0.7
-
mJ
Eoff
Turn-Off Switching Loss
-
1.2
-
mJ
Cies
Input Capacitance
VGE=0V
-
1250
2000
pF
Coes
Output Capacitance
VCE=30V
-
235
-
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
7
-
pF
VF
FRD Forward Voltage
IF=15A
-
1.3
1.7
V
trr
FRD Reverse Recovery Time
IF=15A
-
65
-
ns
Qrr
FRD Reverse Recovery Charge
di/dt = 200 A/μs
-
230
-
nC
Data and specifications subject to change without notice
1
201303274
AP50G60SW-HF
240
16
IC , Collector Current (A)
T C =25 C
200
VGE , Gate -Emitter Voltage (V)
20V
18V
15V
o
160
120
12V
80
V GE =10V
I C =33A
V CC =250V
V CC =300V
V CC =400V
12
8
4
40
0
0
0
10
20
0
30
10
20
Fig 1. Typical Output Characteristics
50
60
5
V GE = 15 V
V GE =15V
T C =25 o C
VCE(sat) ,Saturation Voltage(V)
80
IC , Collector Current(A)
40
Fig 2. Gate Charge Characterisitics
100
T C =150 o C
60
40
20
4
I C = 50 A
I C =33A
3
2
1
0
0
2
4
6
0
8
40
80
120
160
Junction Temperature ( o C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
1.6
f=1.0MHz
3000
1.2
Capacitance (pF)
Normalized VGE(th) (V)
30
Q G , Gate Charge (nC)
V CE , Collector-Emitter Voltage (V)
0.8
2000
C ies
1000
0.4
-
0
C oes
C res
0
-50
0
50
100
150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
1
5
9
13
17
21
25
29
33
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP50G60SW-HF
1
Normalized Thermal Response (Rthjc)
400
Power Dissipation (W)
300
200
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0
50
100
150
0.00001
200
0.001
0.01
0.1
1
10
Junction Temperature ( ℃ )
t , Pulse Width (s)
Fig 7. Power Dissipation vs. Junction
Temperature
Fig 8. Effective Transient Thermal
Impedance, Junction-to-Case (IGBT)
20
20
T C =25 o C
o
T C = 150 C
I C = 50 A
33 A
15 A
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
0.0001
15
10
5
0
I C = 50 A
33 A
15 A
15
10
5
0
0
4
8
12
16
20
0
4
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
Fig 9. Saturation Voltage vs. VGE
1000
20
V GE =15V
T C =125 o C
T j =150 o C
12
IC ,Collctor Current(A)
IF , Forward Current (A)
16
T j =25 o C
8
100
10
-
4
-
Safe Operating Area
0
1
0
0.4
0.8
1.2
1.6
V F , Forward Voltage (V)
Fig 11. Forward Characteristic of
2
1
10
100
1000
V CE ,Collector - Emitter Voltage(V)
Fig 12. SOA Characteristics
Diode
3