A-POWER AP55T06GS-HF

AP55T06GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
G
BVDSS
60V
RDS(ON)
18mΩ
ID
32.4A
S
Description
AP55T06 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
DS
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, V [email protected]
32.4
A
[email protected]=100℃
Continuous Drain Current, V [email protected]
20.4
A
120
A
39
W
3.13
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
3.2
℃/W
40
℃/W
1
201208141
AP55T06GS-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=24A
-
-
18
mΩ
VGS=4.5V, ID=16A
-
-
30
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=24A
-
24
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=24A
-
16
25.6
nC
Qgs
Gate-Source Charge
VDS=48V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
9
-
ns
tr
Rise Time
ID=24A
-
44
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1200 1920
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
3.4
Ω
Min.
Typ.
IS=24A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP55T06GS-HF
120
100
10V
7.0V
6.0V
ID , Drain Current (A)
100
80
5.0V
60
V GS =4.0V
40
80
10V
7.0V
6.0V
60
5.0V
40
V GS =4.0V
o
T C = 150 C
ID , Drain Current (A)
T C = 25 o C
20
20
0
0
0
4
8
12
0
16
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
3.0
I D =16A
T C =25 o C
I D =24A
V G =10V
2.6
Normalized RDS(ON)
RDS(ON) (mΩ)
24
20
2.2
1.8
1.4
1.0
16
0.6
0.2
12
2
4
6
8
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I D =250uA
16
12
T j =150 o C
Normalized VGS(th)
IS(A)
1.2
T j =25 o C
8
0.8
0.4
4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP55T06GS-HF
f=1.0MHz
1600
I D =24A
V DS =48V
8
1200
C iss
6
C (pF)
VGS , Gate to Source Voltage (V)
10
800
4
400
2
C oss
C rss
0
0
0
10
20
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
Operation in this area
limited by RDS(ON)
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.01
0.1
1
10
100
0.00001
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
40
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
32
24
16
60
40
T j =150 o C
20
T j =25 o C
8
o
T j = -40 C
0
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4