A-POWER AP60T03GS

AP60T03GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching Speed
BVDSS
30V
RDS(ON)
12mΩ
ID
G
45A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GP)
are available for low-profile applications.
TO-220(P)
Absolute Maximum Ratings
Symbol
Rating
Units
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
45
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
32
A
120
A
VDS
Parameter
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
44
W
Linear Derating Factor
0.352
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200809253
AP60T03GS/P
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=20A
-
-
12
mΩ
VGS=4.5V, ID=15A
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=10A
-
25
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=20A
-
11.6
19
nC
VGS(th)
VGS=0V, ID=250uA
Min.
Gate Threshold Voltage
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
8.8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=0.75Ω
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135 1816
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=45A, VGS=0V
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
1.3
V
IS=20A, VGS=0V,
-
23.3
-
ns
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60T03GS/P
90
125
10V
8.0V
ID , Drain Current (A)
100
6.0V
75
5.0V
50
25
6.0V
60
5.0V
30
V G =4.0V
V G =4.0V
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =20A
V G =10V
I D =15A
T C =25 ℃
1.6
Normalized R DS(ON)
60
RDS(ON) (m Ω)
10V
8.0V
o
T C =175 C
ID , Drain Current (A)
o
T C =25 C
40
1.2
0.8
20
0
0.4
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
175
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
10
2
VGS(th) (V)
100
IS(A)
100
o
Fig 3. On-Resistance v.s. Gate Voltage
T j =175 o C
25
T j =25 o C
1
1
0
0.1
0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60T03GS/P
f=1.0MHz
10000
12
V DS =16V
V DS =20V
V DS =24V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
6
C iss
1000
3
C oss
C rss
100
0
0
6
12
18
1
24
8
Q G , Total Gate Charge (nC)
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
100us
10
1ms
10ms
T C =25 o C
Single Pulse
100ms
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
DC
1
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
E3
SYMBOLS
E1
E2
D1
D
b1
L2
L3
b
e
L4
A
A2
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
D1
----
5.10(ref)
----
E
9.70
10.10
10.50
E1
----
7.40(ref)
----
E2
----
6.40(ref)
----
E3
----
8.00(ref)
----
e
2.04
2.54
3.04
L1
----
2.54(ref)
----
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
θ
0°
-----
5°
1.All Dimensions Are in Millimeters.
c θ
c1
Millimeters
2.Dimension Does Not Include Mold Protrusions.
A1
L1
Part Marking Information & Packing : TO-263
Part Number
Package Code
60T03GS
YWWSSS
LOGO
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E
A
E1
SYMBOLS
φ
L1 L5
c1
D1
D
L4
Millimeters
MIN
NOM
MAX
A
4.40
4.60
4.80
b
D
c
E
0.76
0.88
1.00
8.60
8.80
9.00
0.36
0.43
0.50
9.80
10.10
10.40
L4
14.70
15.00
15.30
L5
6.20
6.40
6.60
D1
b1
5.10 REF.
c1
1.25
1.35
1.45
b1
1.17
1.32
1.47
L
13.25
13.75
14.25
2.54 REF.
e
L
c
b
L1
2.60
φ
E1
3.71
2.75
2.89
3.84
3.96
7.4 REF,
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
meet Rohs requirement
60T03GP
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
6