AP60T10GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
BVDSS
100V
RDS(ON)
18mΩ
ID
G
67A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T10GP)
are available for low-profile applications.
GD
Absolute Maximum Ratings
Symbol
Parameter
S
TO-263(S)
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
67
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
42
A
250
A
167
W
288
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
4
Value
Units
0.75
℃/W
40
℃/W
62
℃/W
1
200911104
AP60T10GS/P
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=28A
-
-
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=25V, ID=28A
-
45
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=28A
-
55
90
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
15
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
24
-
nC
2
td(on)
Turn-on Delay Time
VDS=50V
-
16
-
ns
tr
Rise Time
ID=28A
-
68
-
ns
td(off)
Turn-off Delay Time
RG=2.5Ω,VGS=10V
-
29
-
ns
tf
Fall Time
RD=1.8Ω
-
42
-
ns
Ciss
Input Capacitance
VGS=0V
-
2800 4500
pF
Coss
Output Capacitance
VDS=25V
-
400
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
155
-
pF
Min.
Typ.
IS=28A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=28A, VGS=0V
-
80
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
270
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=50V , L=1mH , RG=25Ω , IAS=24A.
4.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60T10GS/P
200
100
o
T C = 150 C
o
T C = 25 C
ID , Drain Current (A)
160
8.0V
120
80
7.0V
ID , Drain Current (A)
10 V
9.0V
80
10V
9.0V
8.0V
60
7.0V
40
V G = 6.0 V
20
40
V G = 6 .0V
0
0
0
2
4
6
8
0
10
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I D = 28A
V G = 10V
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.4
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
30
IS(A)
20
T j =150 o C
T j =25 o C
10
1.2
0.8
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60T10GS/P
f=1.0MHz
4000
12
I D = 28 A
V DS = 50 V
V DS = 60 V
V DS = 80 V
8
3000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
1
80
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
1ms
10
10ms
100ms
DC
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4