A-POWER AP60U02GH

AP60U02GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low On-resistance
▼ Fast Switching Characteristic
25V
RDS(ON)
12mΩ
ID
G
▼ RoHS Compliant
BVDSS
40A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
40
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
28
A
140
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
.
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200907071-1/4
AP60U02GH
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
25
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=24A
-
-
12
mΩ
VGS=4.5V, ID=16A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
29
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=30A
-
15
24
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.5
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.5Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
1070 2180
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
155
-
pF
Min.
Typ.
IS=24A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
22
-
ns
dI/dt=100A/µs
-
13
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP60U02GH
100
150
10V
7.0V
o
T C =25 C
80
ID , Drain Current (A)
120
ID , Drain Current (A)
10V
7.0V
o
T C =175 C
5.0V
90
4.5V
60
5.0V
4.5V
60
40
20
30
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
0
Fig 1. Typical Output Characteristics
2
3
4
5
6
Fig 2. Typical Output Characteristics
20
1.8
I D = 16 A
T C =25 ℃
I D =24A
V G =10V
Normalized RDS(ON)
18
16
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
14
12
1.4
1
10
8
0.6
2
4
6
8
10
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
Normalized VGS(th) (V)
30
20
IS(A)
T j =175 o C
T j =25 o C
10
0
1.2
0.6
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP60U02GH
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D = 30 A
9
C (pF)
V DS = 12 V
V DS = 15 V
V DS = 20 V
6
C iss
1000
3
C oss
C rss
0
100
0
10
20
30
1
5
Q G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
DC
T c =25 o C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
60U02GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence