A-POWER AP6930GMT-HF

AP6930GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Fast Switching Characteristic
RDS(ON)
10.5mΩ
▼ RoHS Compliant & Halogen-Free
ID
20A
D1 D1 D2 D2
D1
D1
D2
D2
Description
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low onresistance and cost-effectiveness.
®
PMPAK 5x6 dual pad provide superior thermal
performance and is design for surface mount
applications.
S1 G1 S2 G2
S1
G1
S2
G2
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
20
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
20
A
[email protected]=25℃
Continuous Drain Current, V GS @ 4.5V
20
A
[email protected]=100℃
Continuous Drain Current, V GS @ 4.5V
[email protected]=25℃
[email protected]=70℃
19
A
3
14.6
A
3
11.7
A
80
A
3.57
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
Units
5
℃/W
35
℃/W
1
201203222
AP6930GMT-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=14A
-
8.1
10.5
mΩ
VGS=4.5V, ID=10A
-
13
17
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.35
3
VDS=10V, ID=10A
-
22
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
28
-
ns
tf
Fall Time
VGS=10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1080 1720
pF
Coss
Output Capacitance
VDS=15V
-
195
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.2
4.4
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 85 ℃/W on steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6930GMT-HF
60
80
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
60
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
50
ID , Drain Current (A)
o
T A =25 C
40
40
30
20
20
10
0
0
0
1
2
3
4
0
5
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
16
I D =14A
V G =10V
I D =10A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
14
12
10
1.6
1.2
0.8
8
0.4
6
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D =250uA
1.6
6
IS(A)
T j =150 o C
Normalized VGS(th)
8
T j =25 o C
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6930GMT-HF
10
f=1.0MHz
1600
8
1200
C iss
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
V DS =15V
800
4
400
2
C oss
C rss
0
0
0
8
16
24
1
32
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
10ms
1
100ms
1s
DC
0.1
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=85 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
V DS =5V
VG
ID , Drain Current (A)
50
QG
40
4.5V
30
QGS
QGD
20
T j =150 o C
o
T j =25 C
10
Charge
T j =-40 o C
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4