A-POWER AP6970GN2-HF

AP6970GN2-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G2
S2
BVDSS
20V
▼ Bottom Exposed DFN
RDS(ON)
45mΩ
▼ Lower Profile
ID
D1
▼ Lower Gate Charge
4.5A
▼ Halogen Free & RoHS Compliant Product
S1
G1
D2
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G2
S2
D1
G2
S2
D1
S1
G1
D2
D2
DFN 2x2
S1
G1
D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
+12
V
3
4.5
A
3
3.6
A
20
A
1.38
W
Continuous Drain Current @ VGS=4.5V
Continuous Drain Current @ VGS=4.5V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient 3
90
℃/W
Data and specifications subject to change without notice
1
201104121
AP6970GN2-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=4A
-
-
45
mΩ
VGS=2.5V, ID=3A
-
-
64
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=4A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=4A
-
4.5
7.2
nC
Qgs
Gate-Source Charge
VDS=10V
-
0.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.7
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
6
-
ns
tr
Rise Time
ID=1A
-
7.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
11
-
ns
tf
Fall Time
VGS=5V
-
2.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
275
440
pF
Coss
Output Capacitance
VDS=10V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.8
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 250 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6970GN2-HF
30
20
o
20
2.5V
V G = 2.0V
10
5.0V
4.5V
3.5V
16
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 o C
5.0V
4.5V
3.5V
T A = 25 C
2.5V
12
V G = 2.0V
8
4
0
0
0
1
2
3
4
5
0
1
Fig 1. Typical Output Characteristics
3
4
5
Fig 2. Typical Output Characteristics
70
2.0
ID=4A
V G = 4.5 V
Normalized RDS(ON)
ID=3A
T A =25 ℃
60
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
50
40
1.6
1.2
0.8
30
0.4
1
2
3
4
5
6
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
I D =250uA
Normalized VGS(th) (V)
1.6
IS(A)
3
2
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6970GN2-HF
f=1.0MHz
400
I D = 4A
V DS =10V
6
300
C iss
C (pF)
VGS , Gate to Source Voltage (V)
8
4
200
2
100
C oss
C rss
0
0
0
2
4
6
1
8
5
9
Fig 7. Gate Charge Characteristics
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1
1s
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 250℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4