A-POWER AP70T03GJ-HF

AP70T03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
30V
RDS(ON)
9mΩ
ID
G
▼ RoHS Compliant
BVDSS
60A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GJ)
are available for low-profile applications.
G
D
S
TO-252(H)
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
60
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
43
A
195
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
53
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
2.8
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200810134
AP70T03GH/J-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=33A
-
35
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=33A
-
17
27
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Gate Threshold Voltage
gfs
IDSS
Drain-Source Leakage Current
o
IGSS
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
Qoss
Output Charge
VDD=15V,VGS=0V
-
13.5
22
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=33A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.45Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
1485 2400
pF
Coss
Output Capacitance
VDS=25V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Min.
Typ.
IS=33A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V,
-
27
-
ns
dI/dt=100A/µs
-
20
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP70T03GH/J-HF
120
200
ID , Drain Current (A)
T C =25 C
ID , Drain Current (A)
T C =175 o C
10V
8.0V
o
150
6.0V
100
10V
8.0V
6.0V
90
60
V G =4.0V
30
50
V G =4.0V
0
0
0.0
1.5
3.0
0.0
4.5
V DS , Drain-to-Source Voltage (V)
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2
I D =20A
T C =25 ℃
Normalized RDS(ON)
I D =33A
V G =10V
RDS(ON) (mΩ)
40
20
1.6
1.2
0.8
0
0.4
0
4
8
12
16
-50
2.5
100
2
VGS(th) (V)
IS(A)
175
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1000
T j =175 o C
100
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
10
25
o
V GS , Gate-to-Source Voltage (V)
T j =25 o C
1
1.5
1
0.1
0.5
0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70T03GH/J-HF
12
f=1.0MHz
10000
9
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =33A
6
C iss
1000
3
C oss
C rss
100
0
0
5
10
15
20
25
1
30
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
10us
ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
1
0.1
1
10
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4