A-POWER AP70T03GP

AP70T03GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching Speed
BVDSS
30V
RDS(ON)
9mΩ
ID
G
60A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GP)
are available for low-profile applications.
G D
G
D
S
TO-263(S)
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Rating
Units
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
60
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
43
A
195
A
VDS
Parameter
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
53
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
2.8
℃/W
40
℃/W
62
℃/W
1
200903053
AP70T03GS/P
Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
18
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=33A
-
35
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C) VDS=24V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=33A
-
16.5
-
nC
VGS(th)
VGS=0V, ID=250uA
Gate Threshold Voltage
gfs
IDSS
Drain-Source Leakage Current
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10.3
-
nC
VDS=15V
-
8.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=33A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
21.4
-
ns
tf
Fall Time
RD=0.45Ω
-
8.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1485
-
pF
Coss
Output Capacitance
VDS=25V
-
245
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Min.
Typ.
-
-
60
A
-
-
195
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=60A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP70T03GS/P
120
200
o
T C =175 C
150
6.0V
100
V G =4.0V
50
90
60
V G =4.0V
30
0
0
0.0
1.5
3.0
0.0
4.5
V DS , Drain-to-Source Voltage (V)
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.8
I D =20A
T C =25 ℃
I D =33A
V G =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
10V
8.0V
6.0V
o
10V
8.0V
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
40
20
1.4
1.2
1.0
0.8
0
0.6
2
4
6
8
10
-50
25
100
175
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2.5
2.1
T j =175 o C
VGS(th) (V)
IS(A)
10
T j =25 o C
1.7
1
1.3
0.1
0.9
0
0.5
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
25
100
175
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70T03GS/P
12
f=1.0MHz
10000
9
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =33A
6
C iss
1000
3
C oss
C rss
100
0
0
5
10
15
20
25
30
1
8
Fig 7. Gate Charge Characteristics
Normalized Thermal Response (Rthjc)
10us
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 C
Single Pulse
1
29
10
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
0.1
22
Fig 8. Typical Capacitance Characteristics
1000
o
15
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4