A-POWER AP75N07AGP

AP75N07AGP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
75V
RDS(ON)
11mΩ
ID
G
80A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
4
Rating
Units
75
V
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
80
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
70
A
IDM
Pulsed Drain Current1
320
A
[email protected]=25℃
Total Power Dissipation
300
W
450
mJ
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data & specifications subject to change without notice
1
200902093
AP75N07AGP
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max.
Units
VGS=0V, ID=1mA
75
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=40A
-
-
11
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=15V, ID=40A
-
78
-
S
IDSS
Drain-Source Leakage Current
VDS=75V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125 C) VDS=60V, VGS=0V
-
-
250
uA
Gate-Source Leakage
-
-
+100
nA
o
IGSS
VGS=+30V, VDS=0V
2
Qg
Total Gate Charge
ID=40A
-
100
160
nC
Qgs
Gate-Source Charge
VDS=60V
-
13
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
47
-
nC
2
td(on)
Turn-on Delay Time
VDD=40V
-
15
-
ns
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
67
-
ns
tf
Fall Time
RD=1.33Ω
-
86
-
ns
Ciss
Input Capacitance
VGS=0V
-
3220
5150
pF
Coss
Output Capacitance
VDS=25V
-
650
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.3
5
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
2
Min.
Typ.
Max.
Units
Tj=25℃, IS=40A, VGS=0V
Test Conditions
-
-
1.5
V
trr
Reverse Recovery Time
IS=40A, VGS=0V
-
80
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
235
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
4.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 108A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75N07AGP
160
280
T C = 25 o C
10V
9 .0 V
8 .0V
7.0 V
200
160
120
80
10V
9 .0 V
8 .0V
7.0 V
o
T C = 175 C
ID , Drain Current (A)
ID , Drain Current (A)
240
V G = 5 .0V
120
80
V G = 5 .0V
40
40
0
0
0
3
6
9
0
12
Fig 1. Typical Output Characteristics
2
3
4
5
6
Fig 2. Typical Output Characteristics
18
2.4
I D =40A
I D =40A
V G =10V
T C =25 o C
2.0
Normalized RDS(ON)
16
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
14
12
1.6
1.2
0.8
10
0.4
8
2
4
6
8
-50
10
0
50
100
150
200
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
40
1.2
T j =175 o C
Normalized VGS(th) (V)
IS(A)
30
T j =25 o C
20
1.0
0.8
10
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP75N07AGP
f=1.0MHz
12
10000
ID=40A
C iss
8
V DS = 60 V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
1000
C oss
4
C rss
2
100
0
0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100us
ID (A)
100
1ms
10ms
10
100ms
DC
T c =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
SINGLE PULSE
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
ID , Drain Current (A)
V DS =5V
VG
T j =175 o C
T j =25 o C
120
QG
10V
QGS
80
QGD
40
Charge
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4