AP75T12GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ RoHS Compliant & Halogen-Free
BVDSS
120V
RDS(ON)
12.5mΩ
ID
G
41A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
120
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
41
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
26
A
160
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
44.6
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
2.8
℃/W
65
℃/W
1
201108251
AP75T12GI-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
I)
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
120
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=30A
-
-
12.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=100V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
80
128
nC
Qgs
Gate-Source Charge
VDS=96V
-
15
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
40
-
nC
td(on)
Turn-on Delay Time
VDS=60V
-
27
-
ns
tr
Rise Time
ID=30A
-
100
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
75
-
ns
tf
Fall Time
VGS=10V
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
3750 6000
pF
Coss
Output Capacitance
VDS=25V
-
470
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
260
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
65
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
170
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75T12GI-HF
300
160
o
10V
8.0V
o
T C = 25 C
T C = 150 C
10V
8.0V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
250
200
7.0V
150
6.0V
100
120
6.0V
80
V GS =5.0V
40
V GS =5.0V
50
0
0
0
8
16
24
32
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
1.2
I D =1mA
I D =30A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
2.0
1.1
1
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
-50
o
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2.0
40
I D =250uA
Normalized VGS(th) (V)
1.6
IS(A)
30
T j =150 o C
T j =25 o C
20
1.2
0.8
10
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP75T12GI-HF
12
f=1.0MHz
5000
10
4000
V DS =60V
V DS =72V
V DS =96V
8
C iss
3000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
6
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
ID (A)
Operation in this area
limited by RDS(ON)
100us
1ms
10
10ms
100ms
1s
DC
1
T c =25 o C
Single Pulse
0.1
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
ID , Drain Current (A)
40
QG
10V
30
QGS
QGD
20
10
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4