A-POWER AP80N30W_10

AP80N30W
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ High Speed Switching
BVDSS
300V
RDS(ON)
66mΩ
ID
G
36A
S
Description
AP80N30 from APEC provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
TO-3P
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
300
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
36
A
144
A
36
A
144
A
208
W
30
A
45
mJ
-55 to 150
℃
150
℃
1
IDM
Pulsed Drain Current
IDR
Body-Drain Diode Reverse Drain Current
IDR(PULSE)
Body-Drain Diode Reverse Drain Peak Current
[email protected]=25℃
Total Power Dissipation
Avalanche Current
IAR
1
3
3
EAR
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.6
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
℃/W
Data and specifications subject to change without notice
1
201009153
AP80N30W
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
300
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
-
66
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
3
-
4.5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
56
-
S
VDS=300V, VGS=0V
-
-
10
uA
IDSS
Drain-Source Leakage Current (T j=125 C) VDS=240V, VGS=0V
-
-
200
uA
IGSS
Gate-Source Leakage
VGS= +30V, VDS=0V
-
-
+0.1
uA
ID=30A
-
117
180
nC
Drain-Source Leakage Current
o
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=240V
-
28
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
42
-
nC
VDS=150V
-
40
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
165
-
ns
tf
Fall Time
VGS=10V
-
95
-
ns
Ciss
Input Capacitance
VGS=0V
-
5700 9120
pF
Coss
Output Capacitance
VDS=30V
-
525
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Min.
Typ.
IS=30A, VGS=0V
-
-
1.5
V
IS=12A, VGS=0V
-
310
-
ns
dI/dt=100A/µs
-
3.5
-
µC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP80N30W
60
120
10V
9.0V
8.0V
7.0V
T C =25 C
ID , Drain Current (A)
100
10V
9.0V
8.0V
7.0V
o
T C =150 C
50
ID , Drain Current (A)
o
80
60
40
40
V G =5.0V
30
20
V G =5.0V
10
20
0
0
0.0
4.0
8.0
12.0
0.0
16.0
4.0
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.8
I D =30A
V G =10V
T C =25 o C
I D =30A
2.3
Normalized RDS(ON)
RDS(ON) (mΩ)
65
60
1.8
1.3
55
0.8
50
0.3
4
5
6
7
8
9
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.4
1.2
T j =150 o C
20
Normalized VGS(th)(V)
IS(A)
30
T j =25 o C
1
0.8
10
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP80N30W
f=1.0MHz
12
8000
I D =30A
V DS =240V
6000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4000
4
2000
2
C oss
C rss
0
0
0
40
80
120
1
160
6
Fig 7. Gate Charge Characteristics
16
21
26
31
36
Fig 8. Typical Capacitance Characteristics
1
100us
100
Operation in this
area limited by
RDS(ON)
1ms
10
10ms
100ms
DC
1
T c =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
ID (A)
11
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.001
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4