A-POWER AP83T03AGH-HF

AP83T03AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
6.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
66A
S
Description
AP83T03A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
66
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
42
A
160
A
50
W
2
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount) 3
Data & specifications subject to change without notice
Value
Units
2.5
℃/W
62.5
℃/W
1
201305171
AP83T03AGH-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
6.5
mΩ
VGS=4.5V, ID=30A
-
-
9.5
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=40A
-
60
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
14
22.4
nC
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=40A
-
85
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1080 1728
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP83T03AGH-HF
200
120
10V
7.0V
6.0V
5.0V
V G =4.0V
100
ID , Drain Current (A)
160
ID , Drain Current (A)
o
T C =150 C
10V
7.0V
6.0V
5.0V
V G = 4.0V
T C =25 o C
120
80
80
60
40
40
20
0
0
0
2
4
6
8
10
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
2.0
8
I D =30A
I D =40A
V G =10V
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
7
1.6
1.2
+20
6
0.8
0.4
5
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
I D =250uA
30
o
T j =150 C
Normalized VGS(th)
IS(A)
1.2
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP83T03AGH-HF
f=1.0MHz
1600
I D =40A
V DS =24V
8
1200
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
800
4
400
C oss
2
C rss
0
0
0
10
20
1
30
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
1000
ID (A)
Operation in this area
limited by RDS(ON)
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
1
Duty factor = 0.5
0.2
0.1
0.1
+20
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
80
ID , Drain Current (A)
ID , Drain Current (A)
V DS =5V
60
40
T j =150 o C
20
60
40
20
T j =25 o C
o
T j = -40 C
0
0
0
2
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4