A-POWER AP90T03GI

AP90T03GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Fast Switching Performance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
BVDSS
30V
RDS(ON)
4mΩ
ID
▼ Full Isolation Package
75A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Parameter
Rating
Units
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
75
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
50
A
Symbol
VDS
1
IDM
Pulsed Drain Current
300
A
[email protected]=25℃
Total Power Dissipation
36.8
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
200901192
AP90T03GI
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=45A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
0.8
-
3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=40A
-
60
96
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
8.5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
nC
VDS=15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
66
-
ns
tf
Fall Time
RD=0.5Ω
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
4090 6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T03GI
200
160
10V
7.0V
5.0V
4.5V
T C =25 C
ID , Drain Current (A)
160
10V
7.0V
5.0V
4.5V
o
T C =150 C
ID , Drain Current (A)
o
V G =3.0V
120
80
120
V G =3.0V
80
40
40
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
2.0
I D = 20 A
I D =45A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
4.6
4.2
3.8
1.6
1.2
0.8
3.4
trr
0.31
3
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
100
Qrr
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
16
1.6
T j =25 o C
VGS(th) (V)
IS(A)
50
o
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
12
1.2
8
0.8
4
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GI
f=1.0MHz
12
10000
C iss
V DS =15V
V DS =20V
V DS =24V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
10
6
C oss
1000
C rss
4
2
0
100
0
20
40
60
80
100
120
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
ID (A)
100us
1ms
10
10ms
100ms
1s
DC
1
o
T C =25 C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
Qrr
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
trr
0.31
0.001
0.1
t
Single Pulse
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.30
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00
10.40
L
12.00
---
15.00
L3
2.91
3.41
3.91
L4
14.70
15.40
16.10
φ
e
----
3.20
----
----
2.54
----
L3
A1
b1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
b
c
e
Part Marking Information & Packing : TO-220CFM
LOGO
Part Number
90T03GI
YWWSSS
Package Code
Meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5