AP9451GG
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Capable of 2.5V Gate Drive
-20V
RDS(ON)
135mΩ
ID
G
▼ RoHS Compliant
BVDSS
- 2.3A
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, ultra low
on-resistance and cost-effectiveness.
SOT-89
G
DD
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
+12
V
3
-2.3
A
3
-1.9
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-12
A
PD@TA=25℃
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
100
℃/W
1
201106303
AP9451GG
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-
-
V
-
-0.02
-
V/℃
VGS=-4.5V, ID=-2.3A
-
-
135
mΩ
VGS=-2.5V, ID=-1.0A
-
-
240
mΩ
-0.5
-
-1.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-2.3A
-
2.3
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID= -2.3A
-
5.5
9
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS= -15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS= -4.5V
-
2.5
-
nC
VDS=-10V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
25
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
20
-
ns
tf
Fall Time
RD=10Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS= -20V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Min.
Typ.
Tj=25℃, IS=-1A, VGS=0V
-
-
-1.6
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS= -2.5A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t ≦ 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9451GG
12
12
-10V
- 7V
- 5V
-4.5V
-ID , Drain Current (A)
10
8
10
V GS = -3V
6
4
V GS = -3V
8
6
4
2
2
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
300
I D = -2.3A
V G = -10V
I D =-1.0A
T A =25 ℃
2
Normalized RDS(ON)
RDS(ON) (mΩ )
-10V
- 7V
- 5V
-4.5V
T A =150 o
-ID , Drain Current (A)
T A =25 o
200
1.6
1.2
±12
0.8
0.4
100
0
1
2
3
4
5
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
5
1.5
100
Normalized -VGS(th) (V)
4
-IS(A)
3
T j =150 o
T j =25 o
2
1.0
0.5
1
0.0
0
0.1
0.3
0.5
0.7
0.9
1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9451GG
f=1.0MH
1000
I D = -2.4A
V DS = -15V
4
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
5
3
C oss
100
2
C rss
1
0
10
0
2
4
6
1
3
5
Q G , Total Gate Charge (nC)
7
9
11
13
15
17
19
21
23
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
1ms
10ms
10
Operation in this
area limited by
RDS(ON)
-ID (A)
Normalized Thermal Response (Rthja)
Duty factor=0.5
100ms
1
1s
0.1
T A =25 ℃
Single Pulse
DC
0.2
0.1
0.1
±12
0.05
0.02
0.01
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja=100℃/W
Single Pulse
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
T j =25 o C
-ID , Drain Current (A)
V DS = -5V
VG
T j =150 o C
QG
12
-4.5V
QGS
8
QGD
4
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4