AP9468GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
40V
RDS(ON)
7mΩ
ID
G
80A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
□
G D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current
ID@TC=100℃
Continuous Drain Current
3
1
Rating
Units
40
V
+20
V
80
A
55
A
320
A
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
4
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
Value
Units
1.4
℃/W
40
℃/W
1
200906193
AP9468GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.01
-
V/℃
VGS=10V, ID=45A
-
-
7
mΩ
VGS=4.5V, ID=30A
-
-
9
mΩ
0.5
-
1.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
36
58
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=20V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=1.0Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=0.67Ω
-
16
-
ns
Ciss
Input Capacitance
VGS=0V
-
2235 3580
pF
Coss
Output Capacitance
VDS=25V
-
365
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
325
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=20A, VGS=0V,
-
38
-
ns
dI/dt=100A/µs
-
30
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9468GS
240
240
10V
7.0 V
5.0V
4.5 V
ID , Drain Current (A)
200
T C =150 o C
160
120
V G = 3.0 V
80
40
160
120
V G =3.0V
80
40
0
0
0.0
2.0
4.0
6.0
8.0
0.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
I D =30A
T C =25 o C
1.6
Normalized RDS(ON)
7
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
8
6
1.2
0.8
5
0.4
4
2
4
6
8
25
10
50
75
100
125
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
8.0
T j =25 o C
T j =150 o C
30
7.0
RDS(ON) (mΩ)
IS(A)
10V
7 .0V
5.0V
4.5 V
200
ID , Drain Current (A)
o
T C =25 C
20
V GS =4.5V
6.0
V GS =10V
10
5.0
0
4.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
0
20
40
60
80
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP9468GS
f=1.0MHz
10000
I D =30A
12
V DS =20V
V DS =25V
V DS =30V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C iss
1000
C oss
C rss
4
100
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
ID (A)
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
V DS =5V
VG
ID , Drain Current (A)
200
T j =25 o C
T j =150 o C
QG
160
4.5V
QGS
120
QGD
80
40
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4