A-POWER AP94T07GP1-HF

AP94T07GP1-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
BVDSS
75V
RDS(ON)
8mΩ
ID
80A
S
Description
Advanced
Power
MOSFETs
fromfrom
APEC
provide
thethe
designer with the
The Advanced
Power
MOSFETs
APEC
provide
best
combination
of
fast
switching,
ruggedized
device
design, low ondesigner with the best combination of fast switching,
resistance
and
cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220SG package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
TO-220SG(P1)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
3
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
4
Rating
Units
75
V
+20
V
80
A
58
A
300
A
125
W
45
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Value
Units
Rthj-c
Symbol
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Parameter
Data and specifications subject to change without notice
1
201107291
AP94T07GP1-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
75
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
58
92
nC
Qgs
Gate-Source Charge
VDS=60V
-
14
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
29
-
nC
td(on)
Turn-on Delay Time
VDS=40V
-
13
-
ns
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
26
-
ns
tf
Fall Time
VGS=10V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
2350 3760
pF
Coss
Output Capacitance
VDS=25V
-
390
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
245
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2.6
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
83
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
4.Starting Tj=25oC, VDD=30V, L=0.1mH, RG=25Ω, IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP94T07GP1-HF
250
160
80
V G =6.0V
T C =175 C
ID , Drain Current (A)
200
ID , Drain Current (A)
120
10V
9.0V
8.0V
7.0V
o
10V
9.0V
8.0V
o
T C =25 C
7.0V
150
100
V G = 6.0V
40
50
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0.0
2.0
V DS , Drain-to-Source Voltage (V)
4.0
6.0
8.0
10.0
12.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
I D =40A
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
2.4
1.1
1
2.0
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
200
-50
0
o
Fig 3. Normalized BVDSS v.s. Junction
100
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
40
1.6
30
1.2
T j =175 o C
Normalized VGS(th) (V)
IS(A)
50
T j , Junction Temperature ( o C)
T j , Junction Temperature ( C)
T j =25 o C
20
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP94T07GP1-HF
f=1.0MHz
12
4000
I D =40A
3000
V DS =40V
V DS =45V
V DS =60V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
100
ID (A)
100us
1ms
10
10ms
100ms
DC
T C =25 o C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
ID , Drain Current (A)
80
QG
10V
60
QGS
QGD
40
20
Charge
Q
0
25
50
75
100
125
T C , Case Temperature (
150
o
175
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4