A-POWER AP9561AGI-HF

AP9561AGI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-40V
RDS(ON)
18mΩ
ID
G
-30A
S
Description
AP9561A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-30
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-19
A
1
IDM
Pulsed Drain Current
-120
A
[email protected]=25℃
Total Power Dissipation
29.7
W
[email protected]=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance Junction-case
4.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201301141
AP9561AGI-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-20A
-
-
18
mΩ
VGS=-4.5V, ID=-15A
-
-
26
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
31
-
S
IDSS
Drain-Source Leakage Current
VDS=-32V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-20A
-
27
43
nC
Qgs
Gate-Source Charge
VDS=-32V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
14
-
nC
td(on)
Turn-on Delay Time
VDS=-20V
-
10
-
ns
tr
Rise Time
ID=-20A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
66
-
ns
tf
Fall Time
VGS=-10V
-
90
-
ns
Ciss
Input Capacitance
VGS=0V
-
3000 4800
pF
Coss
Output Capacitance
VDS=-25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.5
11
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-20A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9561AGI-HF
120
160
100
-ID , Drain Current (A)
-ID , Drain Current (A)
120
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
T C = 150 o C
-10V
-7.0 V
-6.0 V
-5.0 V
T C = 25 o C
V G = - 4.0 V
80
80
60
40
40
20
0
0
0
4
8
12
0
16
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
22
2.0
I D = -20A
V G = -10V
I D = -15 A
1.8
T C =25 o C
20
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
18
1.4
1.2
1.0
0.8
16
0.6
0.4
14
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
I D = -250uA
1.6
Normalized VGS(th)
-IS(A)
16
12
T j =150 o C
T j =25 o C
8
1.2
0.8
0.4
4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9561AGI-HF
10
f=1.0MHz
4000
8
C iss
3000
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -32V
I D = -20A
6
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
100us
Operation in this area
limited by RDS(ON)
1ms
10
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
80
V DS = -5V
-ID , Drain Current (A)
-ID , Drain Current (A)
T j =25 o C
30
20
10
T j =150 o C
60
40
20
0
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4