A-POWER AP9571GP-HF

AP9571GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
-60V
RDS(ON)
12.5mΩ
ID
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
G
-105A
S
Description
AP9571 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low
package cost contribute to the worldwide popular package.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
-105
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
-67
A
1
IDM
Pulsed Drain Current
-300
A
[email protected]=25℃
Total Power Dissipation
250
W
[email protected]=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
o
C
-55 to 150
o
C
Operating Junction Temperature Range
TJ
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.5
o
C/W
62
o
C/W
1
201206141
AP9571GP-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A
-
-
12.5
mΩ
VGS=-4.5V, ID=-20A
-
-
17
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
60
-
S
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-30A
-
63
100
nC
Qgs
Gate-Source Charge
VDS=-48V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
37
-
nC
td(on)
Turn-on Delay Time
VDS=-30V
-
12.5
-
ns
tr
Rise Time
ID=-30A
-
54
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
125
-
ns
tf
Fall Time
VGS=-10V
-
140
-
ns
Ciss
Input Capacitance
VGS=0V
-
6000 9600
pF
Coss
Output Capacitance
VDS=-25V
-
940
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
320
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.3
8.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-30A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
90
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9571GP-HF
200
320
-10V
-7.0V
-6.0V
-ID , Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
o
T C =150 C
160
-ID , Drain Current (A)
o
T C = 25 C
240
-5.0V
160
V G = - 4.0V
120
V G = -4.0V
80
80
40
0
0
0
4
8
12
16
20
24
0
4
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
15
2.0
I D = -20 A
I D = - 30 A
V G = -10V
T C =25 o C
Normalized RDS(ON)
14
RDS(ON) (mΩ)
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
13
12
1.6
1.2
11
0.8
10
9
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
30
I D = -1mA
Normalized -VGS(th)
1.6
-IS(A)
20
T j =150 o C
T j =25 o C
10
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9571GP-HF
f=1.0MHz
10
10000
-VGS , Gate to Source Voltage (V)
V DS = - 48 V
I D = - 30 A
8
C (pF)
8000
6
C iss
6000
4
4000
2
2000
C oss
C rss
0
0
0
40
80
120
1
160
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
100
Normalized Thermal Response (Rthjc)
1
1ms
10ms
100ms
DC
10
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
1000
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
160
V DS = -5V
T j =25 o C
T j =150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
80
60
40
120
80
40
20
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Maximum Continuous Drain
Current v.s. Case Temperature
4