A-POWER AP9575GM

AP9575GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
D
▼ Simple Drive Requirement
D
D
▼ Fast Switching Characteristic
BVDSS
-60V
RDS(ON)
90mΩ
ID
SO-8
S
S
S
-4A
G
Description
D
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-60
V
±25
V
3
-4.0
A
3
-3.2
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201204072
AP9575GM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-4A
-
-
90
mΩ
VGS=-4.5V, ID=-3A
-
-
120
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-48V, VGS=0V
-
-
-100
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=-4A
-
14
28
nC
VGS(th)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
3.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
VDS=-30V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
46
-
ns
tf
Fall Time
RD=30Ω
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
1100 2790
pF
Coss
Output Capacitance
VDS=-25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9575GM
50
40
-10V
-7.0V
-5.0V
T A = 25 C
-ID , Drain Current (A)
40
-10V
-7.0V
-5.0V
TA=150oC
-ID , Drain Current (A)
o
-4.5V
30
20
30
-4.5V
20
V G = -3.0 V
10
V G = -3.0 V
10
0
0
0
2
4
6
8
10
0
6
8
10
12
14
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
I D = -4 A
V G =-10V
ID=-3A
T A =25 ℃
90
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
100
80
70
1.2
0.8
60
0.4
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.2
Normalized -VGS(th) (V)
1.4
6
T j =150 o C
50
o
10
4
0
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
-IS(A)
2
-V DS , Drain-to-Source Voltage (V)
T j =25 o C
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575GM
f=1.0MHz
14
10000
I D = -4A
V DS = - 48 V
10
C iss
1000
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
0
10
0
10
20
30
40
1
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
1ms
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4