AP95T08GP
Preliminary
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
80V
RDS(ON)
7mΩ
ID
G
▼ RoHS Compliant
BVDSS
80A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercialindustrial power applications and suited for low voltage applications
such as DC/DC converters.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
80
V
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
70
A
320
A
300
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
2
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Linear Derating Factor
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200606071pre-1/4
AP95T08GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
80
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=60A
-
-
7
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=60A
-
56
-
S
IDSS
Drain-Source Leakage Current (T j=25oC)
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150oC)
VDS=64V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=40A
-
93
150
nC
IGSS
2
VGS=0V, ID=1mA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
26
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
42
-
nC
VDS=40V
-
23
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
96
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
39
-
ns
tf
Fall Time
RD=1Ω
-
65
-
ns
Ciss
Input Capacitance
VGS=0V
-
4450 7120
pF
Coss
Output Capacitance
VDS=25V
-
850
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
360
-
pF
Min.
Typ.
IS=60A, VGS=0V
-
-
1.3
V
IS=40A, VGS=0V
-
72
-
ns
dI/dt=100A/µs
-
170
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 142A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP95T08GP
240
120
10 V
9.0 V
8.0 V
7.0 V
ID , Drain Current (A)
200
T C = 1 75 o C
10V
9.0V
8.0V
7.0V
100
ID , Drain Current (A)
o
T C = 25 C
160
120
80
80
V G = 6.0 V
60
40
V G = 6.0 V
20
40
0
0
0
1
2
3
0
4
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
16
2.4
I D =60A
V G =10V
I D =30A
o
T C =25 C
2.0
12
Normalized RDS(ON)
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
8
1.6
1.2
0.8
4
0.4
4
5
6
7
8
9
10
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60
1.4
50
1.2
T j =175 C
40
IS(A)
o
Normalized VGS(th) (V)
o
T j =25 C
30
20
1
0.8
0.6
10
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP95T08GP
f=1.0MHz
10000
I D = 40 A
12
C iss
V DS = 40 V
V DS = 50 V
V DS = 64 V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
14
6
1000
C oss
4
C rss
2
0
100
0
20
40
60
80
100
120
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
100
1ms
10ms
10
100ms
DC
o
T c =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4