AP9922GEO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
D2
▼ Capable of 1.8V Gate Drive
S2
G1
S1
▼ Optimal DC/DC Battery Application
TSSOP-8
BVDSS
20V
RDS(ON)
16mΩ
ID
S1
D1
6.4A
▼ RoHS Compliant & Halogen-Free
D1
Description
G1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+8
V
Continuous Drain Current
3
6.4
A
Continuous Drain Current
3
5.1
A
30
A
1
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
0.01
W/℃
TSTG
Linear Derating Factor
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
125
℃/W
1
201009294
AP9922GEO-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
-
16
mΩ
VGS=2.5V, ID=4A
-
-
22
mΩ
VGS=1.8V, ID=3A
-
-
30
mΩ
0.3
-
1
V
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=70 C) VDS=16V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
ID=6A
-
28
45
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
11
-
ns
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
22
-
ns
tf
Fall Time
RD=15Ω
-
58
-
ns
Ciss
Input Capacitance
VGS=0V
-
1630 2600
pF
Coss
Output Capacitance
VDS=20V
-
295
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
270
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=0.84A,VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=6A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9922GEO-HF
30
30
ID , Drain Current (A)
20
10
0
20
10
0
0
1
1
2
2
3
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
30
ID=6A
V G = 4.5 V
ID=4A
T A =25 ℃
1.4
Normalized RDS(ON)
25
RDS(ON) (mΩ)
5.0V
4.5V
3.5V
2.5V
V G =1.8V
o
T A = 150 C
ID , Drain Current (A)
5.0V
4.5V
3.5V
2.5V
V G =1.8V
T A =25 o C
20
1.2
1.0
15
0.8
0.6
10
0
2
4
6
-50
8
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.0
10
8
VGS(th) (V)
0.8
IS(A)
6
T j =150 o C
T j =25 o C
0.6
4
0.4
2
0
0.2
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9922GEO-HF
f=1.0MHz
10
10000
V DS = 10 V
V DS = 12 V
V DS = 16 V
C (pF)
VGS , Gate to Source Voltage (V)
ID=6A
8
6
C iss
1000
4
C oss
C rss
2
100
0
0
10
20
30
40
50
1
60
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
10
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=208℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
T j =25 o C
ID , Drain Current (A)
V DS =5V
VG
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4