AP9924GO
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
S2
D
▼ Capable of 2.5V gate drive
G2
S2
G1
▼ RoHS Compliant
TSSOP-8
D
S1
BVDSS
20V
RDS(ON)
20mΩ
ID
S1
Description
6.8A
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
G2
G1
S1
S2
Rating
Units
20
V
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
+8
V
Continuous Drain Current
3
6.8
A
Continuous Drain Current
3
5.4
A
20
A
1.38
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
90
℃/W
1
2009002021
AP9924GO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
-
20
mΩ
VGS=2.5V, ID=4A
-
-
30
mΩ
0.25
-
1
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=6A
-
19
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +8V, VDS=0V
-
-
+100
nA
ID=6A
-
9
14.4
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
16
-
ns
tf
Fall Time
RD=10Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=20V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 250℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9924GO
40
40
ID , Drain Current (A)
TA=25 C
30
20
5.0V
4.5V
3.5V
2.5V
o
T A =150 C
ID , Drain Current (A)
5.0V
4.5V
3.5V
2.5V
V G = 2.0 V
o
10
30
V G = 2.0 V
20
10
0
0
0
0
1
1
2
2
0
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.6
ID=4A
ID=6A
V G =4.5V
T A =25 o C
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
30
20
1.2
1.0
0.8
0.6
10
1
2
3
4
5
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
6
IS(A)
4
o
T j =150 C
T j =25 o C
2
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9924GO
f=1.0MHz
8
800
600
V DS =10V
V DS =12V
V DS =16V
4
C (pF)
VGS , Gate to Source Voltage (V)
I D =6A
6
400
C iss
200
2
C oss
C rss
0
0
0
4
8
12
1
16
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
ID (A)
10
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=250 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4