A-POWER AP9926GEO-HF

AP9926GEO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-resistance
G2
S2
▼ Capable of 2.5V Gate Drive
D2
▼ Low Drive Current
S2
TSSOP-8
S1
G1
S1
BVDSS
20V
RDS(ON)
28mΩ
ID
D1
4.6A
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
Description
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
+ 12
V
3
4.6
A
3
3.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
[email protected]=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
125
℃/W
1
201208082
AP9926GEO-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=4A
-
-
28
mΩ
VGS=2.5V, ID=2A
-
-
40
mΩ
0.5
-
-
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=4.6A
-
9.7
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+10 V, VDS=0V
-
-
+10
uA
Qg
Total Gate Charge
ID=4.6A
-
12.5
-
nC
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
6.5
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
5
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
26.2
-
ns
tf
Fall Time
VGS=5V
-
6.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
355
-
pF
Coss
Output Capacitance
VDS=20V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
0.83
A
Tj=25℃,IS=1.25A,VGS=0V
-
-
1.2
V
o
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9926GEO-HF
24
25
T C =25 o C
15
18
ID , Drain Current (A)
ID , Drain Current (A)
20
4.5V
4.0V
3.5V
3.0V
T C =150 o C
4.5V
4.0V
3.5V
3.0V
2.5V
10
V G =2.0V
2.5V
12
V G =2.0V
6
5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
V DS , Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
40
I D = 4A
T A =25 o C
I D = 4A
V G =4.5V
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
35
30
1.2
1.0
25
0.8
20
0.6
2
3
4
5
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
100
1.4
1
T j =150 o C
VGS(th) (V)
IS (A)
10
T j =25 o C
1.0
0.6
0.1
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.2
0.01
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9926GEO-HF
f=1.0MHz
10
1000
VGS , Gate to Source Voltage (V)
I D =4.6A
8
C iss
V DS =10V
V DS =15V
V DS =20V
C oss
C (pF)
6
4
100
C rss
2
10
0
0
5
10
15
20
1
25
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
100us
10
1ms
ID (A)
13
10ms
1
100ms
0.1
1s
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
Single Pulse
T
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
DC
Rthja=208oC/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4