A-POWER AP9962GMA

AP9962GMA
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ SO-8 similar area footprint and pin assignment
▼ Low Gate Charge
D
▼ Fast Switching Speed
BVDSS
40V
RDS(ON)
20mΩ
ID
36A
▼ RoHS Compliant
G
S
D
Description
The APAK-5 package is preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SS
S G
APAK-5
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, V GS @ 10V
36
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
23
A
120
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
37
W
Linear Derating Factor
0.29
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
Max.
3.4
℃/W
Max.
85
℃/W
200523061-1/4
AP9962GMA
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=20A
-
-
20
mΩ
VGS=4.5V, ID=16A
-
-
30
mΩ
0.8
-
2.5
V
-
20
-
S
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=0V, ID=250uA
2
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=20A
-
14
22
nC
IGSS
2
VDS=10V, ID=20A
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
8
-
ns
tr
Rise Time
ID=20A
-
48
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=1Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1160 1860
pF
Coss
Output Capacitance
VDS=25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
2.25
Ω
Min.
Typ.
Max. Units
IS=20A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
25
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
2/4
AP9962GMA
90
100
T C =25 o C
10V
7.0V
o
10V
7.0V
T C =150 C
5.0V
5.0V
ID , Drain Current (A)
ID , Drain Current (A)
80
4.5V
60
40
20
60
4.5V
30
V G =3.0V
V G =3.0V
0
0
0.0
2.0
4.0
6.0
0.0
2.0
Fig 1. Typical Output Characteristics
8.0
1.6
I D = 16 A
T C =25 ℃
Normalized RDS(ON)
I D =20A
V G =10V
50
RDS(ON) (mΩ)
6.0
Fig 2. Typical Output Characteristics
70
30
10
1.2
0.8
0.4
2
4
6
8
10
25
50
V GS , Gate-to-Source Voltage (V)
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
20
T j =150 o C
T j =25 o C
40.0
RDS(ON) (mΩ)
15
IS (A)
4.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
10
30.0
V GS =4.5V
20.0
V GS =10V
5
10.0
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
10
20
30
40
50
60
70
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3/4
AP9962GMA
f=1.0MHz
10000
12
V DS = 20 V
V DS = 25 V
V DS = 30 V
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
9
6
C iss
1000
3
C oss
C rss
100
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100
100us
1ms
10
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.1
0.1
1
10
100
Normalized Thermal Response (R thjc)
1000
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
80
VG
V DS =5V
o
T j =25 C
ID , Drain Current (A)
60
o
T j =150 C
QG
4.5V
40
QGS
QGD
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4