A-POWER AP9965GEH

AP9965GEH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
G
BVDSS
40V
RDS(ON)
28mΩ
ID
▼ Fast Switching Characteristic
27A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
□
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9965GEJ)
are available for low-profile applications.
S
TO-252(H)
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+16
V
[email protected]=25℃
Continuous Drain Current
27
A
[email protected]=100℃
Continuous Drain Current
17
A
80
A
31.25
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
3
Value
Units
4.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200903094
AP9965GEH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=18A
-
-
28
mΩ
VGS=4.5V, ID=12A
-
-
32
mΩ
0.8
-
2.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=18A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+30
uA
ID=18A
-
8.5
14
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.1
-
nC
VDS=20V
-
5.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20.5
-
ns
tf
Fall Time
RD=20Ω
-
4.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=18A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=18A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9965GEH/J
60
80
ID , Drain Current (A)
ID , Drain Current (A)
T C =150 C
5.0V
4.5 V
60
10V
7 .0V
o
10V
7.0 V
T C =25 o C
40
V G = 3.0 V
5.0V
4.5 V
40
V G =3.0V
20
20
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0
8.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
6.0
8.0
Fig 2. Typical Output Characteristics
2.0
70
I D =18A
V G =10V
I D =12A
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
2.0
V DS , Drain-to-Source Voltage (V)
50
1.6
1.2
30
0.8
0.4
10
2
4
6
8
25
10
50
V GS , Gate-to-Source Voltage (V)
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
25
50.0
20
RDS(ON) (mΩ)
IS(A)
40.0
15
V GS =4.5V
30.0
10
V GS =10V
T j =25 o C
o
T j =150 C
20.0
5
0
10.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
0
10
20
30
40
50
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP9965GEH/J
f=1.0MHz
1000
C iss
I D =18A
12
V DS =20V
V DS =25V
V DS =30V
C (pF)
VGS , Gate to Source Voltage (V)
16
8
100
C oss
C rss
4
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100us
ID (A)
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
30
T j =150 o C
QG
4.5V
QGS
20
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4