A-POWER AP9970GK

AP9970GK
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
60V
RDS(ON)
50mΩ
ID
S
▼ RoHS Compliant
BVDSS
5.8A
D
SOT-223
G
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and costeffectiveness.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
60
V
+20
V
Continuous Drain Current
3
5.8
A
Continuous Drain Current
3
4.6
A
30
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.8
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
45
℃/W
1
201204252
AP9970GK
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.05
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=3A
-
-
60
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70 C) VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
11.5
15
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=30V
-
6
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=30Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
910
1450
pF
Coss
Output Capacitance
VDS=25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
31
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9970GK
30
30
20
10
V G =3.0V
ID , Drain Current (A)
T A =25 C
ID , Drain Current (A)
T A =150 o C
10V
7.0V
5.0V
4.5V
o
20
V G =3.0V
10
0
0
0
1
2
3
4
0
5
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
ID=3A
ID=5A
V G =10V
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
80
60
1.4
1.0
20
0.6
40
2
4
6
8
25
10
V GS , Gate-to-Source Voltage (V)
50
75
Fig 3. On-Resistance v.s. Gate Voltage
125
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60.0
10
8
V GS =4.5V
6
o
RDS(ON) (mΩ)
IS (A)
100
T j , Junction Temperature ( o C)
o
T j =150 C
T j =25 C
4
50.0
V GS =10V
40.0
2
0
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
30.0
0
10
20
30
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3
AP9970GK
f=1.0MHz
10000
10
I D =5A
V DS =32V
V DS =40V
V DS =48V
8
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
10
0
0
5
10
15
20
25
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
1
10ms
0.1
100ms
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120℃/W
DC
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
20
QG
T j =150 o C
4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4