AP9971AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D2
D2
D1
▼ Single Drive Requirement
▼ Surface Mount Package
D1
BVDSS
60V
RDS(ON)
50mΩ
ID
5A
G2
SO-8
S1
S2
G1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=100℃
Rating
Units
60
V
±25
V
3
5
A
3
3.2
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
2
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Linear Derating Factor
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200919071-1/4
AP9971AGM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
60
-
-
V
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=2.5A
-
-
60
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS=0V, ID=250uA
2
Max. Units
VDS=10V, ID=5A
-
4.8
-
S
o
VDS=60V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±25V
-
-
±100
nA
ID=5A
-
17.5
28
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.3
-
nC
VDS=30V
-
5.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=6Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
650
1040
pF
Coss
Output Capacitance
VDS=25V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.6A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
32
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9971AGM
30
30
o
o
T A =150 C
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
20
V G =4.0V
10
0
10V
7.0V
5.0V
4.5V
20
V G =4.0V
10
0
0
2
4
6
8
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
70
2.0
I D =5A
I D =5A
T A =25 o C
Normalized RDS(ON)
V G =10V
60
RDSON (mΩ)
4
V DS , Drain-to-Source Voltage (V)
50
1.6
1.2
0.8
40
0.4
30
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.4
8
2
o
o
T j =25 C
VGS(th) (V)
T j =150 C
IS (A)
6
1.6
4
1.2
2
0.8
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9971AGM
14
f=1.0MHz
10000
I D =5A
V DS =30V
V DS =36V
V DS =48V
10
1000
Ciss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
Coss
Crss
4
2
10
0
0
5
10
15
20
25
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
1
100ms
0.1
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
DUTY=0.5
0.2
0.1
PDM
0.1
t
T
0.05
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
0.02
Rthja = 135℃/W
0.01
DC
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
9971AGM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
θ