AP9972AGR-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
16mΩ
ID
G
60A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such as
DC/DC converters.
TO-262(R)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
60
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
38
A
1
IDM
Pulsed Drain Current
240
A
PD@TC=25℃
Total Power Dissipation
89
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201109151
AP9972AGR-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=30A
-
-
16
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
44
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
50
80
nC
Qgs
Gate-Source Charge
VDS=48V
-
13
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
14
-
ns
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
27
-
ns
tf
Fall Time
VGS=10V
-
57
-
ns
Ciss
Input Capacitance
VGS=0V
-
2410 3860
pF
Coss
Output Capacitance
VDS=25V
-
290
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
240
-
pF
Rg
Gate Resistance
f=1.0MHz
1
2
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=30A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
48
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9972AGR-HF
200
100
10V
9.0V
80
8.0V
150
10V
9.0V
8.0V
7.0V
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
7.0V
100
V G =6.0V
V G =6.0V
60
40
50
20
0
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.0
I D =30A
V G =10V
I D = 30 A
o
T C =25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
18
16
14
1.6
1.2
0.8
12
0.4
10
5
6
7
8
9
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
1.5
Normalized VGS(th) (V)
1.3
30
IS(A)
T j =150 o C
T j =25 o C
20
1.1
0.9
10
0.7
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9972AGR-HF
f=1.0MHz
12
4000
V DS = 32 V
V DS = 40 V
V DS = 48 V
8
3000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
10
6
C iss
2000
4
1000
2
C oss
C rss
0
0
0
20
40
1
60
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
10
1ms
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
1000
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
80
o
o
T j =25 C
T j =150 C
ID , Drain Current (A)
V DS =5V
ID , Drain Current (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
60
40
20
60
40
20
0
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Maximum Continuous Drain
Currentv.s. Case Temperature
4