A-POWER AP9974AGP

AP9974AGP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
▼ Low Gate Charge
D
68A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
68
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
43
A
1
IDM
Pulsed Drain Current
272
A
[email protected]=25℃
Total Power Dissipation
104
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200906193
AP9974AGP
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
60
-
-
V
VGS=10V, ID=45A
-
-
12
mΩ
VGS=4.5V, ID=30A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=30A
-
28
45
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
19
-
nC
VDS=30V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
42
-
ns
tf
Fall Time
RD=1Ω
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
2055 3300
pF
Coss
Output Capacitance
VDS=25V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
200
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
43
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9974AGP
200
100
10V
7.0V
T C =25 o C
o
160
80
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
5.0V
4.5V
T C = 150 C
5.0V
120
4.5V
80
40
60
40
V G =3.0V
20
V G =3.0V
0
0
0
2
4
6
8
10
12
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
16
2.0
I D = 30 A
I D =45A
V G =10V
T C =25 o C
1.6
Normalized RDS(ON)
14
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
12
10
8
1.2
0.8
0.4
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
40
1.2
IS(A)
T j =150 o C
Normalized VGS(th) (V)
30
T j =25 o C
20
1.0
0.8
10
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9974AGP
f=1.0MHz
12
10000
V DS = 30 V
V DS = 36 V
V DS = 48 V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 30 A
10
6
1000
4
C oss
C rss
2
100
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
ID (A)
100
100us
1ms
10
10ms
100ms
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
o
V DS =5V
T j =25 C
VG
o
T j =150 C
ID , Drain Current (A)
80
QG
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4