A-POWER AP9976GP

AP9976GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
BVDSS
60V
RDS(ON)
21mΩ
ID
G
30A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
30
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
19
A
100
A
39
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.2
℃/W
62
℃/W
1
200806021
AP9976GP
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=18A
-
-
21
mΩ
VGS=4.5V, ID=12A
-
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
11.5
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C)
VDS=48V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=12A
-
30
48
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
5.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11
-
nC
VDS=30V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=2.5Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1320 2100
pF
Coss
Output Capacitance
VDS=25V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=12A, VGS=0V
-
-
1.3
V
IS=12A, VGS=0V
-
32
-
ns
dI/dt=100A/µs
-
42
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9976GP
100
20
60
5.0 V
40
20
10V
7.0V
6.0V
16
ID , Drain Current (A)
80
ID , Drain Current (A)
T C = 150 o C
10 V
7.0 V
6.0 V
T C = 25 o C
12
5.0V
8
V GS =4.0V
4
V GS =4.0V
0
0
0
2
4
6
0
8
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
40
I D =12A
I D =18A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
30
20
1.6
1.2
0.8
10
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
30
IS(A)
20
T j =150 o C
T j =25 o C
10
1.2
0.8
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9976GP
12
f=1.0MHz
1600
V DS = 30 V
V DS =36V
V DS =48V
10
C iss
1200
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 12 A
6
800
4
400
2
C oxx
C rss
0
0
0
10
20
30
1
40
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E
A
E1
SYMBOLS
φ
L1 L5
c1
D1
D
L4
Millimeters
MIN
NOM
MAX
A
4.40
4.60
4.80
b
D
c
E
0.76
0.88
1.00
8.60
8.80
9.00
0.36
0.43
0.50
9.80
10.10
10.40
L4
14.70
15.00
15.30
L5
6.20
6.40
6.60
D1
b1
5.10 REF.
c1
1.25
1.35
1.45
b1
1.17
1.32
1.47
L
13.25
13.75
14.25
2.54 REF.
e
L
c
b
L1
2.60
φ
E1
3.71
2.75
2.89
3.84
3.96
7.4 REF,
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
meet Rohs requirement
9976GP
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5