A-POWER AP9980GJ

AP9980GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
80V
▼ Single Drive Requirement
RDS(ON)
45mΩ
▼ Fast Switching Performance
ID
21.3A
▼ Low Gate Charge
D
G
S
Description
G D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9980GJ) are
available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
+25
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
21.3
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
13.4
A
80
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
41.7
W
Linear Derating Factor
0.33
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200810172
AP9980GH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
80
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.07
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=12A
-
-
45
mΩ
VGS=4.5V, ID=8A
-
-
55
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C) VDS=64V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+25V
-
-
+100
nA
ID=12A
-
18
30
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
VDS=40V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
29
-
ns
tf
Fall Time
RD=3.3Ω
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1810 2900
pF
Coss
Output Capacitance
VDS=25V
-
135
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
96
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
-
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=12A, VGS=0V,
-
57
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
140
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9980GH/J
60
50
10V
6.0V
5.0V
4.5V
T C =25 o C
40
40
ID , Drain Current (A)
ID , Drain Current (A)
50
30
20
10
30
20
V G =3.0V
10
V G =3.0V
0
0
0
3
6
9
12
15
18
0
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
54
2.2
I D = 12 A
V G =10V
2.0
ID=8A
T C =25 o C
1.8
Normalized RDS(ON)
50
RDS(ON) (mΩ)
10V
6.0V
5.0V
4.5V
T C =150 o C
46
1.6
1.4
1.2
1.0
42
0.8
0.6
38
trr
0.4
3
5
7
9
-50
11
0
50
100
o
V GS , Gate-to-Source Voltage (V)
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
3
2.5
6
VGS(th) (V)
IS(A)
2
T j =150 o C
T j =25 o C
4
1.5
1
2
0.5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9980GH/J
f=1.0MHz
12
10000
I D = 12 A
C iss
V DS = 4 0V
V DS = 50 V
V DS = 64 V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
C rss
100
4
2
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
10us
100us
ID (A)
10
1ms
10ms
100ms
1
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
t , Pulse Width (s)
Qrr
1
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
E3
B1
F1
e
Millimeters
SYMBOLS
E1
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
F
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
9980GH
Package Code
Meet Rohs requirement
for low voltage MOSFET only
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E1
E
A1
B2
F
B1
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.50
0.69
0.88
B2
0.60
0.87
1.14
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
5.20
5.35
5.50
E
6.70
7.00
7.30
E1
5.40
5.80
6.20
e
----
2.30
----
F
5.88
6.84
7.80
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
9980GJ
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
6