A-POWER AP9992GI-HF

AP9992GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
3.5mΩ
ID
G
84A
S
Description
AP9992 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
84
A
[email protected]=100℃
Continuous Drain Current, V GS @ 10V
53
A
200
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
41.6
W
[email protected]=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201301221
AP9992GI-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=40A
-
-
3.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
80
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
135
216
nC
Qgs
Gate-Source Charge
VDS=48V
-
21
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
75
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
28
-
ns
tr
Rise Time
ID=40A
-
115
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
55
-
ns
tf
Fall Time
VGS=10V
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
5500 8800
pF
Coss
Output Capacitance
VDS=25V
-
930
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
670
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
130
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9992GI-HF
300
160
ID , Drain Current (A)
250
ID , Drain Current (A)
T C =150 o C
10V
9.0V
8.0V
o
T C =25 C
7.0V
200
150
V G = 6.0V
100
10V
9.0V
8.0V
7.0V
V G =6.0V
120
80
40
50
0
0
0
4
8
12
16
20
24
0
2
Fig 1. Typical Output Characteristics
6
8
10
12
Fig 2. Typical Output Characteristics
2.0
1.2
I D =40A
V G =10V
Normalized RDS(ON)
I D =1mA
1.1
Normalized BVDSS
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
1.6
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Temperature
2.0
40
I D =250uA
1.6
T j =150 o C
Normalized VGS(th)
IS(A)
30
T j =25 o C
20
1.2
0.8
10
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9992GI-HF
f=1.0MHz
12
8000
I D =40A
V DS =48V
6000
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4000
4
2000
C oss
C rss
2
0
0
0
40
80
120
1
160
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
ID (A)
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
100us
1ms
10
10ms
100ms
1
1s
DC
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
ID , Drain Current (A)
80
QG
10V
60
QGS
QGD
40
20
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4