A-POWER AP9997BGHJ-HF

AP9997BGH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
100V
RDS(ON)
145mΩ
ID
G
9.3A
S
Description
AP9997B series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
The TO-252 package is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for high
current application due to the low connection resistance. The through-hole
version (AP9997BGJ) are available for low-profile applications.
GD
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Rating
Units
VDS
Drain-Source Voltage
Parameter
100
V
VGS
Gate-Source Voltage
+30
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
9.3
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
5.8
A
30
A
27.8
W
2
W
Symbol
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
3
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201204121
AP9997BGH/J-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=5A
-
-
145
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=80V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
6
-
ns
tr
Rise Time
ID=5A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
14.5
-
ns
tf
Fall Time
VGS=10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=5A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9997BGH/J-HF
20
16
T C = 25 o C
ID , Drain Current (A)
16
ID , Drain Current (A)
T C = 150 o C
10V
8.0V
7.0V
6.0V
12
8
V G = 5.0V
10V
8.0V
7.0V
6.0V
V G = 5.0V
12
8
4
4
0
0
0
2
4
6
0
8
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
2.4
I D =5A
V G =10V
I D =5A
o
T C =25 C
180
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
160
140
120
1.6
1.2
0.8
100
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
I D =250uA
6
T j =150 o C
Normalized VGS(th)
IS(A)
8
T j =25 o C
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9997BGH/J-HF
ID=5A
V DS = 80 V
8
600
6
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
800
10
400
C iss
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
1
12
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
Operation in this area
limited by RDS(ON)
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10
100us
1ms
1
10ms
100ms
DC
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
ID , Drain Current (A)
8
QG
4.5V
6
QGS
QGD
4
2
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4