A-POWER AP9998GI-HF

AP9998GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
100V
RDS(ON)
25mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
44A
S
Description
AP9998 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
Rating
Units
100
V
+20
V
3
44
A
3
28
A
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
160
A
[email protected]=25℃
Total Power Dissipation
31.2
W
[email protected]=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201310151
AP9998GI-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
100
-
-
V
VGS=10V, ID=24A
-
-
25
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=24A
-
36
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=24A
-
30
48
nC
Qgs
Gate-Source Charge
VDS=80V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
13
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
10
-
ns
tr
Rise Time
ID=24A
-
40
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
20
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=24A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
160
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the channel temperature does not exceed 150oC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9998GI-HF
150
100
10V
9.0V
8.0V
o
T C =25 C
125
10V
9.0V
8.0V
7.0V
o
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
80
7.0V
100
75
V G =6.0V
50
V G =6.0V
60
40
20
25
0
0
0
4
8
12
16
0
20
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
2.8
1.4
I D =1mA
I D =24A
V G =10V
2.4
1.2
Normalized RDS(ON)
Normalized BVDSS
8
V DS , Drain-to-Source Voltage (V)
1
2.0
1.6
1.2
0.8
0.8
0.4
0.6
-50
0
50
100
-50
150
0
T j , Junction Temperature ( o C)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
30
1.8
Normalized VGS(th)
I D =250uA
20
IS(A)
T j =150 o C
T j =25 o C
10
1.2
0.6
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9998GI-HF
f=1.0MHz
2000
I D = 24 A
V DS =80V
10
1600
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
1200
6
800
4
400
2
C oss
C rss
0
0
0
10
20
30
1
40
21
Q G , Total Gate Charge (nC)
41
61
81
101
121
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Normalized Thermal Response (R thjc)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
ID (A)
100us
10
1ms
10ms
100ms
1
o
T C =25 C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V DS =5V
VG
ID , Drain Current (A)
80
QG
10V
60
QGS
QGD
40
T j =150 o C
20
o
T j =25 C
Charge
o
T j = -40 C
Q
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4