ASB AST20S

AST20S
High Gain, Low Noise Amplifier
Features
Description
·18 dB Gain at 900 MHz
·0.6 dB NF at 900 MHz
·30 dBm OIP3 at 900 MHz
·17 dBm P1dB at 900 MHz
·One-stage LNA
AST20S is a one-stage LNA which has a low noise,
high gain, and high linearity over a wide range of
frequency up to 6 GHz. It is also suitable for use in
the low noise amplifier block of the mobile wireless
systems of T-DMB, CDMA, GSM, PCS, WCDMA,
WiBro, WiMAX, and WLAN so on. The amplifier is
available in an SOT-363 package and passes the
stringent DC, RF, and reliability tests.
Package Style: SOT-363
Application Circuit
· 698 ~ 787 MHz
Typical Performance
· 900 MHz
Parameters
Units
Testing Frequency
MHz
900
1950
2450
3500
Gain
dB
18
15.5
13
11
S11
dB
-13
-11
-15
-12
· 1755 ~ 2140 MHz
S22
dB
-15
-13
-13
-15
· 1950 MHz
dBm
30
34
33
30
· 1950 MHz (Balanced Type)
Noise Figure
dB
0.6
0.7
0.9
2.1
Output P1dB
dBm
17
18
18.5
18
Current
mA
48
V
3.15
Output IP3
1)
Device Voltage
Typical
· 880 ~ 953 MHz
· 900 MHz (Balanced Type)
· 2140 MHz / 2450 MHz
· 2500 MHz / 2600 MHz
· 3500 MHz
· 1200 ~ 1900 MHz
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
· 433 MHz / 315 MHz
Product Specifications*
Parameters
Frequency
Units
· 850 ~ 950 MHz
Min
MHz
· 1472 MHz
· Satellite Phone
S11
dB
-13
S22
dB
-15
28
· 174 ~ 240 MHz
· 50 ~ 200 MHz / 50 ~ 300 MHz
30
Noise Figure
dB
Output P1dB
dBm
15
17
Current
mA
40
48
Device Voltage
0.6
V
· 1210 ~ 1620 MHz (GPS)
18
dB
dBm
Max
900
Gain
Output IP3
17
Typ
0.7
· 50 ~ 810 MHz
55
· 470 ~ 860 MHz (CMMB)
(Wideband antenna)
3.15
*100% in-house DC & RF testing is done on packaged products before taping
· 70 ~ 2700 MHz (ONU, 50 ohm)
· 2300 ~ 2700 MHz
· 900 ~ 2100 MHz
Absolute Maximum Ratings
Parameters
(SMATV, 50 ohm)
Rating
Operating Case Temperature
-40 to +85°C
Storage Temperature
-40 to +150°C
Device Voltage
+6 V
Operating Junction Temperature
+150°C
Input RF Power (CW, 50ohm matched)*
22 dBm
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
Pin Configuration
Pin No.
Function
1
RF IN
2,3,6
GND
4
RF OUT / Bias
5
NC
August 2012
AST20S
High Gain, Low Noise Amplifier
Outline Drawing
Symbols
A
A1
A2
b
C
D
F
E1
e
e1
L
Pin NO.
Function
Pin NO.
Function.
1
RF IN
4
RF OUT / Bias
2
GND
5
NC
3
GND
6
GND
Dimensions (In mm)
MIN
NOM
MAX
0.90
1.00
1.10
0.025
0.062
0.10
0.875
0.937
1.00
0.20
0.30
0.40
0.10
0.125
0.15
1.90
2.00
2.10
1.15
1.25
1.35
2.00
2.10
2.20
-0.65BSC
--1.30BSC
--0.425REF
--
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1A
Voltage Level: 300 V
MM
Class A
Voltage Level: 50 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260°C reflow
2/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
698 ~ 787 MHz
+5 V
Frequency (MHz)
Symbol
Unit
Power Gain
Gp
dB
20
19
Noise Figure
NF
dB
0.55
0.5
Input Return Loss
RLin
dB
-8
-10
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
RLout
dB
-15
-15
Po(1dB)
dBm
16.5
OIP3
dBm
29
Icc
mA
698
787
48
48
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
R3=39 W
C2=10 nF
R2=5.1 kW
C6=1 uF
C5=10 nF
L1=18 nH
C1=100 pF
RF IN
L2=47 nH
*P1
C3=100 pF RF OUT
AST20S
*P1
Bottom
R4=130 W
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 2.0 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
25
0
20
15
S11 (dB)
Gain (dB)
-5
10
-15
5
0
400
-10
500
600
700
800
900
1000
-20
400
500
600
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
-25
400
800
900
1000
3
2
1
500
600
700
800
900
1000
0
0
500
Frequency (MHz)
3/33
700
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
900 MHz
Test Conditions
Gp
F = 900 MHz
MIN.
TYP.
MAX.
Unit
18
dB
Noise Figure
NF
F = 900 MHz
0.6
dB
Input Return Loss
RLin
F = 900 MHz
-13
dB
Output Return Loss
RLout
F = 900 MHz
-15
dB
Po(1dB)
F = 900 MHz
17
dBm
OIP3
F = 900 MHz
30
dBm
Icc
F = 900 MHz
Non-RF
48
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
R3=39 W
C2=10 nF
R2=5.1 kW
C6=1 uF
C5=10 nF
L1=12 nH
C1=100 pF
RF IN
L2=47 nH
*P1
C3=100 pF RF OUT
AST20S
*P1
Bottom
R4=130 W
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 2.0 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
30
0
25
-5
20
-10
S11 (dB)
Gain (dB)
S-parameters & Noise Figure
15
10
0
600
-20
o
-40 c
o
25 c
o
85 c
5
700
800
900
1000
1100
-15
o
-40 c
o
25 c
o
85 c
-25
1200
-30
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
o
-40 c
o
25 c
o
85 c
-25
-30
600
3
2
1
0
700
800
900
1000
1100
1200
0
500
4/33
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
1.2
1.1
1.0
Noise Figure (dB)
0.9
S(2,2)
S(1,1)
S11
S22
0.8
0.7
0.6
0.5
0.4
0.3
0.2
600
700
800
900
1000
1100
1200
Frequency (MHz)
freq (600.0MHz to 1.200GHz)
Current vs. Temperature
Gain vs. Temperature
60
21
20
19
Gain (dB)
Current (mA)
50
40
18
30
Frequency = 900 MHz
17
20
-60
-40
-20
0
20
40
60
80
16
-60
100
-40
-20
o
18
30
Output IP3 (dBm)
P1dB (dBm)
32
16
14
Frequency = 900 MHz
-40
-20
0
40
60
80
100
Output IP3 vs. Temperature
20
10
-60
20
Temperature ( C)
P1dB vs. Temperature
12
0
o
Temperature ( C)
20
40
60
80
28
26
Frequency = 900 MHz
24
100
22
-60
-40
-20
0
20
40
60
80
100
o
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 900 MHz)
40
Output IP3 (dBm)
35
30
25
20
o
-40 c
o
25 c
o
85 c
15
10
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
13
Pout per Tone (dBm)
5/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
S11 < -18 dB
880 ~ 953 MHz
+5 V
Frequency (MHz)
Symbol
Unit
Power Gain
Gp
dB
19.5
19
Noise Figure
NF
dB
0.8
0.8
Input Return Loss
RLin
dB
-20
-18
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
RLout
dB
-14
-14
Po(1dB)
dBm
16.5
16.5
OIP3
dBm
27
28
Icc
mA
48
48
880
953
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
R3=39 W
C2=10 nF
R2=5.1 kW
C6=1 uF
C5=10 nF
L2=15 nH
C1=100 pF
RF IN
*P1
L3=12 nH
C3=100 pF
AST20S
L1=8.2 nH
*P1
R4=130 W
RF OUT
Bottom
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.1 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
25
-5
20
S11 (dB)
Gain (dB)
-10
15
10
-15
-20
5
0
600
-25
700
800
900
1000
1100
1200
-30
600
700
800
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
1100
1200
3
2
0
700
800
900
1000
1100
1200
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
6/33
1000
1
-20
-25
600
900
Frequency (MHz)
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Symbol
Test Conditions
Gp
F = 900 MHz
22.8
dB
Power Gain
APPLICATION CIRCUIT
Balanced Type
+5 V
TYP.
MAX.
Unit
Noise Figure
NF
F = 900 MHz
0.61
dB
Input Return Loss
RLin
F = 900 MHz
-30
dB
Output Return Loss
RLout
F = 900 MHz
-30
dB
Po(1dB)
F = 900 MHz
20.2
dBm
OIP3
F = 900 MHz
33.3
dBm
Icc
F = 900 MHz
Non-RF
80
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
900 MHz
MIN.
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 50x26 mm2, 0.8T)
Top
Schematic
VDD
C5=1 uF
R2=750 W
C2=10 nF
C1=100 pF
R4=47 W
R3=5.1 kW
C4=10 nF
L1=27 nH
(Coil Inductor)
L2=47 nH
(Coil Inductor)
C3=100 pF
AST20S
R8=50 W
RF IN
*Coupler
VDD
R1=50 W
R5=750 W
C7=10 nF
C6=100 pF
*Coupler
C10=1 uF
RF OUT
Bottom
R7=47 W
R6=5.1 kW
C9=10 nF
L3=27 nH
(Coil Inductor)
L4=47 nH
(Coil Inductor)
C8=100 pF
AST20S
* Coupler : Anaren, XC0900A-03
S-parameters & Noise Figure
40
30
S21
S11
10
S(2,2)
S(1,1)
S - parameter [dB]
20
0
S22
-10
S11
-20
S22
S12
-30
-40
600
700
800
900
1000
1100
1200
Frequency [MHz]
freq (600.0MHz to 1.200GHz)
5
1.2
1.1
4
1.0
Noise Figure (dB)
Stability Factor
0.9
3
2
1
0.8
0.7
0.6
0.5
0.4
0.3
0
0
500
1000
1500
2000
2500
3000
3500
0.2
600
700
Frequency (MHz)
7/33
800
900
1000
1100
1200
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
S11 < -18 dB
1755 ~ 2140 MHz
+5 V
Frequency (MHz)
Symbol
Unit
1755
2140
Power Gain
Gp
dB
13
11.5
Noise Figure
NF
dB
0.7
0.8
Input Return Loss
RLin
dB
-20
-18
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
RLout
dB
-15
-14
Po(1dB)
dBm
17
17.5
OIP3
dBm
32
33
Icc
mA
48
48
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
R3=39 W
C5=1 uF
C4=10 nF
R2=5.1 kW
L1=8.2 nH
C1=100 pF
RF IN
*P1
L2=5.6 nH
C2=100 pF
AST20S
RF OUT
*P1
C3=0.5 pF
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 2.2 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
20
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1600
1700
1800
1900
2000
2100
-30
1600
2200
1700
1800
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
1600
3
2
1
0
1700
1800
1900
2000
2100
2200
0
500
8/33
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Symbol
Test Conditions
Gp
F = 1.95 GHz
15.5
dB
Noise Figure
NF
F = 1.95 GHz
0.75
dB
Input Return Loss
RLin
F = 1.95 GHz
-11
dB
Output Return Loss
RLout
F = 1.95 GHz
-13
dB
Po(1dB)
F = 1.95 GHz
18
dBm
OIP3
F = 1.95 GHz
33.5
dBm
Icc
F = 1.95 GHz
Non-RF
48
mA
Power Gain
APPLICATION CIRCUIT
High Gain
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
1950 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C5=1 uF
R3=39 W
C4=10 nF
R2=5.1 kW
L1=10 nH
C1=100 pF
RF IN
L2=10 nH
*P1
C3=6.8 pF
AST20S
C2=0.75 pF
RF OUT
Bottom
*P1
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 0.75 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & Noise Figure
30
20
S(2,2)
S(1,1)
S - parameter [dB]
S21
10
0
-10
S11
S22
S22
S11
-20
S12
-30
1700
1800
1900
2000
2100
2200
2300
Frequency [MHz]
freq (1.700GHz to 2.300GHz)
5
1.2
4
1.0
1.1
Noise Figure (dB)
Stability Factor
0.9
3
2
1
0.8
0.7
0.6
0.5
0.4
0.3
0
0
500
1000
1500
2000
2500
3000
3500
0.2
1700
Frequency (MHz)
9/33
1800
1900
2000
2100
2200
2300
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Symbol
Test Conditions
Gp
F = 1.95 GHz
13.8
dB
Noise Figure
NF
F = 1.95 GHz
0.6
dB
Input Return Loss
RLin
F = 1.95 GHz
-11
dB
Output Return Loss
RLout
F = 1.95 GHz
-15
dB
Po(1dB)
F = 1.95 GHz
19
dBm
OIP3
F = 1.95 GHz
34
dBm
Icc
F = 1.95 GHz
Non-RF
48
mA
Power Gain
APPLICATION CIRCUIT
Low Noise
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
1950 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
R3=39 W
C2=10 nF
C5=1 uF
R2=5.1 kW
L1=8.2 nH
C1=100 pF
RF IN
L2=10 nH
*P1
C3=6.8 pF
AST20S
*P1
RF OUT
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
20
0
15
-5
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
-15
5
0
1700
-10
1800
1900
2000
2100
2200
2300
-20
1700
1800
1900
0
2100
2200
2300
5
4
Stability Factor
-5
S22 (dB)
2000
Frequency (MHz)
Frequency (MHz)
-10
3
2
-15
1
-20
1700
1800
1900
2000
2100
Frequency (MHz)
10/33
2200
2300
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Symbol
Test Conditions
Gp
F = 1.95 GHz
15.6
dB
Noise Figure
NF
F = 1.95 GHz
0.79
dB
Input Return Loss
RLin
F = 1.95 GHz
-14
dB
Output Return Loss
RLout
F = 1.95 GHz
-14
dB
Po(1dB)
F = 1.95 GHz
19.6
dBm
OIP3
F = 1.95 GHz
35
dBm
Icc
F = 1.95 GHz
Non-RF
80
mA
Power Gain
APPLICATION CIRCUIT
Balanced Type
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
1950 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 50x26 mm2, 0.8T)
Top
VDD
C4=1 uF
R2=750 W
C2=10 nF
R4=47 W
R3=5.1 kW
L1=10 nH
(Coil Inductor)
C1=100 pF
L2=10 nH
(Coil Inductor)
C3=6.8 pF
AST20S
R8=50 W
RF IN
*Coupler
VDD
R1=50 W
R5=750 W
C6=10 nF
*Coupler
C8=1 uF
Bottom
R7=47 W
R6=5.1 kW
L3=10 nH
(Coil Inductor)
C5=100 pF
RF OUT
L4=10 nH
(Coil Inductor)
C7=6.8 pF
AST20S
* Coupler : Anaren, XC1900A-03
S-parameters & Noise Figure
30
20
S22
S(2,2)
S(1,1)
S - parameter [dB]
S21
10
0
S11
-10
S22
-20
S12
-30
1700
S11
1800
1900
2000
2100
2200
2300
Frequency [MHz]
freq (1.700GHz to 2.300GHz)
5
1.3
1.2
4
1.1
3
0.9
Noise Figure (dB)
Stability Factor
1.0
2
0.8
0.7
0.6
0.5
1
0.4
0.3
0
0
500
1000
1500
2000
Frequency (MHz)
11/33
2500
3000
3500
0.2
1700
1800
1900
2000
2100
2200
2300
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
2140 MHz
Test Conditions
Gp
F = 2.14 GHz
MIN.
TYP.
MAX.
12.5
Unit
dB
Noise Figure
NF
F = 2.14 GHz
0.8
dB
Input Return Loss
RLin
F = 2.14 GHz
-13
dB
Output Return Loss
RLout
F = 2.14 GHz
-13
dB
Po(1dB)
F = 2.14 GHz
18.5
dBm
OIP3
F = 2.14 GHz
33.5
dBm
Icc
F = 2.14 GHz
Non-RF
48
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C2=10 nF
C5=1 uF
R3=39 W
R2=5.1 kW
L1=8.2 nH
C1=100 pF
RF IN
L2=10 nH
*P1
C3=10 pF
AST20S
RF OUT
Bottom
*P1
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 2.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
20
0
15
-5
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
1800
-10
-15
1900
2000
2100
2200
2300
2400
-20
1800
1900
2000
Frequency (MHz)
0
2200
2300
2400
5
4
Stability Factor
-5
S22 (dB)
2100
Frequency (MHz)
-10
3
2
-15
1
-20
1800
1900
2000
2100
2200
2300
2400
0
0
500
Frequency (MHz)
12/33
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
2450 MHz
Test Conditions
Gp
F = 2.45 GHz
MIN.
TYP.
MAX.
13
Unit
dB
Noise Figure
NF
F = 2.45 GHz
0.9
dB
Input Return Loss
RLin
F = 2.45 GHz
-15
dB
Output Return Loss
RLout
F = 2.45 GHz
-13
dB
Po(1dB)
F = 2.45 GHz
18.5
dBm
OIP3
F = 2.45 GHz
33
dBm
Icc
F = 2.45 GHz
Non-RF
48
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C5=1 uF
R3=39 W
C3=10 nF
R2=5.1 kW
L1=8.2 nH
C2=100 pF
RF IN
L2=10 nH
*P1
C4=10 pF
AST20S
C1=0.75 pF
*P1
RF OUT
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.0 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & Noise Figure
30
20
S(2,2)
S(1,1)
S - parameter [dB]
S21
10
0
-10
S22
S11
S22
-20
S11
S12
-30
2100
2200
2300
2400
2500
2600
2700
2800
Frequency [MHz]
freq (2.100GHz to 2.800GHz)
5
1.5
4
1.3
1.4
Noise Figure (dB)
Stability Factor
1.2
3
2
1.1
1.0
0.9
0.8
1
0.7
0
0.5
2100
0.6
0
500
1000
1500
2000
2500
3000
3500
2200
Frequency (MHz)
13/33
2300
2400
2500
2600
2700
2800
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
2500 MHz
Test Conditions
Gp
F = 2.5 GHz
MIN.
TYP.
MAX.
Unit
11
dB
Noise Figure
NF
F = 2.5 GHz
0.9
dB
Input Return Loss
RLin
F = 2.5 GHz
-10
dB
Output Return Loss
RLout
F = 2.5 GHz
-14
dB
Po(1dB)
F = 2.5 GHz
15
dBm
OIP3
F = 2.5 GHz
29.5
dBm
Icc
F = 2.5 GHz
Non-RF
20
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+3.3 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +0dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C4=1 uF
R3=33 W
C3=10 nF
R2=5.1 kW
L1=8.2 nH
C1=5 pF
RF IN
L2=10 nH
*P1
C2=10 pF
AST20S
RF OUT
Bottom
*P1
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 2.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
30
S21
10
S(2,2)
S(1,1)
S - parameter [dB]
20
0
S22
S11
S11
-10
S22
S12
-20
-30
2000
2200
2400
2600
2800
3000
Frequency [MHz]
freq (2.000GHz to 3.000GHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
14/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
2600 MHz
Test Conditions
MIN.
TYP.
MAX.
Unit
Gp
F = 2.6 GHz
11
dB
Noise Figure
NF
F = 2.6 GHz
0.9
dB
Input Return Loss
RLin
F = 2.6 GHz
-11
dB
Output Return Loss
RLout
F = 2.6 GHz
-15
dB
Po(1dB)
F = 2.6 GHz
17.5
dBm
OIP3
F = 2.6 GHz
33
dBm
Icc
F = 2.6 GHz
Non-RF
38
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
R3=51 W
C4=1 uF
C3=10 nF
R2=5.1 kW
L1=8.2 nH
C1=5 pF
RF IN
*P1
L2=10 nH
C2=10 pF
AST20S
*P1
RF OUT
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
20
0
15
-5
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
-15
5
0
2000
-10
2200
2400
2600
2800
3000
3200
-20
2000
2200
2400
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
-25
2000
2800
3000
3200
3
2
1
2200
2400
2600
2800
3000
3200
0
0
500
Frequency (MHz)
15/33
2600
Frequency (MHz)
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
3500 MHz
Test Conditions
Gp
F = 3.5 GHz
MIN.
TYP.
MAX.
Unit
11
dB
Noise Figure
NF
F = 3.5 GHz
2.1
dB
Input Return Loss
RLin
F = 3.5 GHz
-12
dB
Output Return Loss
RLout
F = 3.5 GHz
-15
dB
Po(1dB)
F = 3.5 GHz
18
dBm
OIP3
F = 3.5 GHz
30
dBm
Icc
F = 3.5 GHz
Non-RF
48
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
C6=1 uF
R3=39 W
C3=10 nF
R2=5.1 kW
L1=10 nH
C2=100 pF
RF IN
L2=10 nH
*P1
C4=6.8 pF
AST20S
C1=0.75 pF
*P1
C5=0.5 pF
RF OUT
Bottom
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.7 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
30
S11
S22
S21
10
S(2,2)
S(1,1)
S - parameter [dB]
20
0
S11
-10
S22
-20
S12
-30
3000
3200
3400
3600
3800
4000
Frequency [MHz]
freq (3.000GHz to 4.000GHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
16/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
1200 ~ 1900 MHz
+5 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
1200
1550
1900
dB
18.5
16.6
15.9
dB
0.6
0.6
0.7
RLin
dB
-9
-9
-10
RLout
dB
-14
-14
-14
Po(1dB)
dBm
17
17.5
18
OIP3
dBm
31
32
33
Icc
mA
48
48
48
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C1=100 pF
RF IN
C5=1 uF
R3=39 W
C4=10 nF
R2=5.1 kW
L1=10 nH
(Coil Inductor)
*P1
L2=10 nH
C3=6.8 pF
AST20S
C2=0.5 pF
RF OUT
Bottom
*P1
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 0.75 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & Noise Figure
30
20
S21
S(2,2)
S(1,1)
S - parameter [dB]
10
0
S11
-10
S11 S22
S22
-20
S12
-30
-40
800
1000
1200
1400
1600
1800
2000
2200
Frequency [MHz]
freq (800.0MHz to 2.200GHz)
5
1.2
4
1.0
1.1
Noise Figure (dB)
Stability Factor
0.9
3
2
0.8
0.7
0.6
0.5
1
0.4
0
0.2
800
0.3
0
500
1000
1500
2000
2500
3000
3500
1000
Frequency (MHz)
17/33
1200
1400
1600
1800
2000
2200
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
433 MHz
Test Conditions
MIN.
TYP.
MAX.
Unit
Gp
F = 433 MHz
23.5
dB
Noise Figure
NF
F = 433 MHz
0.95
dB
Input Return Loss
RLin
F = 433 MHz
-9
dB
Output Return Loss
RLout
F = 433 MHz
-9
dB
Po(1dB)
F = 433 MHz
16
dBm
OIP3
F = 433 MHz
27.5
dBm
Icc
F = 433 MHz
Non-RF
48
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
C6=1 uF
R3=39 W
C2=10 nF
R2=5.1 kW
C5=10 nF
L1=18 nH
RF IN
C1=7.5 pF
L2=47 nH
*P1
C3=100 pF RF OUT
AST20S
*P1
Bottom
R4=270 W
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 3.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters
30
0
25
-5
S11 (dB)
Gain (dB)
20
15
-10
10
-15
5
0
200
300
400
500
600
-20
200
700
300
Frequency (MHz)
400
500
600
700
600
700
Frequency (MHz)
0
0
-10
-5
S12 [dB]
S22 (dB)
-20
-10
-30
-15
-40
-20
200
300
400
500
600
700
-50
200
Frequency (MHz)
18/33
300
400
500
Frequency [MHz]
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
315 MHz
Test Conditions
MIN.
TYP.
MAX.
Unit
Gp
F = 315 MHz
22
dB
Noise Figure
NF
F = 315 MHz
1.0
dB
Input Return Loss
RLin
F = 315 MHz
-7
dB
Output Return Loss
RLout
F = 315 MHz
-12
dB
Po(1dB)
F = 315 MHz
1.6
dBm
OIP3
F = 315 MHz
17
dBm
Icc
F = 315 MHz
Non-RF
11
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V / 11 mA
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
C6=1 uF
R3=180 W
C2=10 nF
R2=7.5 kW
C5=10 nF
L1=33 nH
C1=5.6 pF
RF IN
L2=47 nH
*P1
C3=100 pF
AST20S
RF OUT
*P1
C7=1 pF
R4=120 W
Bottom
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 3.6 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
30
5
25
0
S11 (dB)
Gain (dB)
20
15
-5
10
-10
5
0
0
100
200
300
400
500
600
-15
0
100
200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
500
600
3
2
0
100
200
300
400
500
600
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
19/33
400
1
-20
-25
300
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
433 MHz
Test Conditions
MIN.
TYP.
MAX.
Unit
Gp
F =433 MHz
20.5
dB
Noise Figure
NF
F =433 MHz
0.9
dB
Input Return Loss
RLin
F =433 MHz
-8
dB
Output Return Loss
RLout
F =433 MHz
-10
dB
Po(1dB)
F =433 MHz
2.5
dBm
OIP3
F =433 MHz
18
dBm
Icc
F =433 MHz
Non-RF
11
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5 V / 11 mA
Symbol
Circuit Current
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=750 W
C6=1 uF
R3=180 W
C2=10 nF
R2=7.5 kW
C5=10 nF
L1=22 nH
C1=5 pF
RF IN
L2=47 nH
*P1
C3=100 pF
AST20S
RF OUT
*P1
C7=1 pF
R4=160 W
Bottom
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 3.6 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
25
-5
15
S11 (dB)
Gain (dB)
20
10
-10
-15
5
0
100
200
300
400
500
600
700
-20
100
200
300
400
500
600
700
Frequency (MHz)
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
100
200
300
400
500
600
700
0
0
500
20/33
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
850 ~ 950 MHz
+5 V / 11 mA
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
868
915
dB
15
14.5
dB
0.8
0.7
RLin
dB
-9
-9
RLout
dB
-8
-8
Po(1dB)
dBm
3
3
OIP3
dBm
18.5
18.5
Icc
mA
11
11
1) OIP3 is measured with two tones at an output power of -10 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C6=1 uF
R3=180 W
C2=10 nF
R2=7.5 kW
C5=10 nF
L1=12 nH
C1=100 pF
RF IN
L2=39 nH
*P1
C3=100 pF
AST20S
RF OUT
Bottom
*P1
C7=0.75 pF
R4=180 W
C4=1 nF
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 3.6 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
5
25
0
20
S22
-5
10
o
-40 c
o
25 c
o
85 c
5
0
600
S11 (dB)
S22 (dB)
Gain (dB)
15
-10
S11
-15
o
-40 c
o
25 c
o
85 c
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
25
5
20
4
Stability Factor
Gain (dB)
15
10
Frequency = 900 MHz
5
0
-60
-40
-20
0
20
40
1000
1100
1200
60
80
3
2
1
100
0
0
500
o
Temperature ( C)
21/33
900
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
GPS
1210 ~ 1620 MHz
+3 V / 18 mA
Frequency (MHz)
Symbol
Unit
Power Gain
Gp
dB
17
15
Noise Figure
NF
dB
0.55
0.55
Input Return Loss
RLin
dB
-11
-11
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
RLout
dB
-10
-12
Po(1dB)
dBm
15.5
16
OIP3
dBm
25.5
27
Icc
mA
18
18
1210~1270
1560~1620
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C4=1 uF
R3=10 W
C2=10 nF
R2=6.2 kW
L1=10 nH
C1=100 pF
RF IN
L2=10 nH
*P1
C3=100 pF
AST20S
RF OUT
Bottom
*P1
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.8 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
25
0
20
15
S11 (dB)
Gain (dB)
-5
10
-10
-15
5
0
1000
1100
1200
1300
1400
1500
1600
1700
1800
-20
1000
1100
1200
Frequency (MHz)
1400
1500
1600
1700
1800
Frequency (MHz)
0
5
4
Stability Factor
-5
S22 (dB)
1300
-10
3
2
-15
1
-20
1000
1100
1200
1300
1400
1500
1600
1700
1800
0
0
500
Frequency (MHz)
22/33
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
1472 MHz
TYP .
TYP .
Unit
Gp
F = 1472 GHz
15
15.5
dB
Noise Figure
NF
F = 1472 GHz
0.45
0.5
dB
Input Return Loss
RLin
F = 1472 GHz
-10
-10
dB
Output Return Loss
RLout
F = 1472 GHz
-13
-15
dB
Po(1dB)
F = 1472 GHz
15
18
dBm
OIP3
F = 1472 GHz
29.5
32
dBm
Icc
F = 1472 GHz
Non-RF
20
45
mA
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
+5V
2)
Test Conditions
Power Gain
APPLICATION CIRCUIT
1)
Symbol
Parameter
Circuit Current
1) OIP3 is measured with two tones at an output power of +0dBm/tone separated by 1MHz.
2)
2) TYP1) : R2 = 8.2KΩ, TYP : R2 = 5.1KΩ
Schematic
Vs=5V
R1=750 W
C4=1 uF
R3=33 W
C2=10 nF
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
R2
L1=10 nH
C1=100 pF
RF IN
L2=10 nH
*P1
C3=100 pF
AST20S
*P1
RF OUT
Bottom
*P1 length 2mm, width 0.3mm
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 2.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
40
30
S21
S - parameter (dB)
20
10
0
S11
-10
S12
-20
S22
-30
-40
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
Frequency (MHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
23/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
Satellite Phone
1525 ~ 1559 MHz
+5 V / 15 mA
Frequency (MHz)
Symbol
Unit
Power Gain
Gp
dB
14.5
14
Noise Figure
NF
dB
0.55
0.55
Input Return Loss
RLin
dB
-9
-9
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
RLout
dB
-14
-14
Po(1dB)
dBm
16.5
OIP3
dBm
25
Icc
mA
15
1525
1559
1) OIP3 is measured with two tones at an output power of -2 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
C4=1 uF
R3=39 W
C3=10 nF
R2=11 kW
L1=10 nH
C1=100 pF
RF IN
L2=10 nH
*P1
C2=100 pF
AST20S
RF OUT
Bottom
*P1
Note: 1) the length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
*P1 Length: 1.8 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
20
0
15
-5
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
-15
5
0
1200
-10
1300
1400
1500
1600
1700
1800
-20
1200
1300
1400
0
1600
1700
1800
5
4
Stability Factor
-5
S22 (dB)
1500
Frequency (MHz)
Frequency (MHz)
-10
3
2
-15
1
-20
1200
1300
1400
1500
1600
1700
1800
0
0
500
Frequency (MHz)
24/33
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
174 ~ 240 MHz
+5 V
Frequency (MHz)
Symbol
Unit
Power Gain
Gp
dB
21
21
Noise Figure
NF
dB
0.9
1.0
Input Return Loss
RLin
dB
-18
-15
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
RLout
dB
-15
-14
Po(1dB)
dBm
17.5
17
OIP3
dBm
29.5
29
Icc
mA
45
45
174
240
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
Bottom
S-parameters & K-factor
40
30
S21
S - parameter (dB)
20
10
0
S11
-10
-20
S12
-30
S22
-40
0
100
200
300
400
500
Frequency (MHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
25/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
50 ~ 200 MHz
+5 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
50
200
dB
18.5
18.5
dB
1.1
1.0
RLin
dB
-11
-13
RLout
dB
-18
-20
Po(1dB)
dBm
7
9
OIP3
dBm
24
23
Icc
mA
15
15
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
R4=110 W
C4=0.1 uF
R2=7.5 kW
L1=330 nH
(Coil Inductor)
C1=0.1 uF
RF IN
C5=1 uF
L2=330 nH
(Coil Inductor)
AST20S
RF OUT
Bottom
C2=0.1 uF
C3=100 pF
R3=620 W
S-parameters & K-factor
40
30
S21
10
S(2,2)
S(1,1)
S - parameter (dB)
20
0
S11
-10
-20
S12
-30
S22
-40
0
100
200
300
400
S22
S11
500
Frequency (MHz)
freq (50.00MHz to 200.0MHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
26/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
50 ~ 300 MHz
+8 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
50
300
dB
18
17.5
dB
1
1.1
RLin
dB
-18
-15
RLout
dB
-18
-20
Po(1dB)
dBm
15
15.5
OIP3
dBm
27
29
Icc
mA
65
65
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
Vs = 8V
R1=820 W
R4=68 W
C4=0.1 uF
R2=7.5 kW
C5=1 uF
L1=330 nH
L3=4.7 nH
C1=10 nF
L2=330 nH
AST20S
R5=24 W
Bottom
C2=10 nF
R6=220 W
RF OUT
R7=220 W
R3=750 W
C3=10 nF
S-parameters & K-factor
40
30
S21
S - parameter (dB)
20
10
0
S11
-10
-20
S22
-30
-40
S12
0
100
200
300
400
500
Frequency (MHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
27/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
50 ~ 810 MHz
+4.5 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
50
500
810
dB
18.7
17.8
17.7
dB
1.0
1.3
1.2
RLin
dB
-20
-9
-12
RLout
dB
-11
-14
-18
Po(1dB)
dBm
11
13
13
OIP3
dBm
24.5
26
26
Icc
mA
28
28
28
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
VDD
R4=750 W
R1=51 W
C5=0.1 uF
R2=5.1 kW
C6=1 uF
L2=560 nH
C1=0.1 uF
RF IN
L1=5.6 nH
C3=3 pF
L3=560 nH
AST20S
RF OUT
Bottom
C2=0.1 uF
L4=68 nH
C4=100 pF
R3=510 W
R5=240 W
S-parameters & K-factor
30
S21
20
0
S(2,2)
S(1,1)
S - parameter [dB]
10
-10
S22
S11
S11
-20
S22
S12
-30
-40
0
200
400
600
800
1000
Frequency [MHz]
freq (50.00MHz to 810.0MHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
28/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
CMMB
470 ~ 860 MHz
+4.5 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
470
860
dB
18.4
18.2
dB
1.2
1.2
RLin
dB
-15
-18
RLout
dB
-12
-15
Po(1dB)
dBm
11
14
OIP3
dBm
24
27
Icc
mA
28
28
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
VDD
R4=750 W
R1=51 W
C5=0.1 uF
R2=5.1 kW
C6=1 uF
L2=18 nH
C1=0.1 uF
RF IN
L1=6.8 nH
C3=3 pF
L3=18 nH
AST20S
C2=0.1 uF
C4=100 pF
RF OUT
Bottom
R3=510 W
S-parameters & K-factor
30
S21
20
0
S(2,2)
S(1,1)
S - parameter [dB]
10
-10
S11
S22
-20
S12
-30
-40
0
200
400
600
800
1000
Frequency [MHz]
freq (470.0MHz to 860.0MHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
29/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
Power Gain
APPLICATION CIRCUIT
ONU, 50 ohm
70 ~ 2700 MHz
+5 V
Symbol
Unit
Gp
dB
Frequency (MHz)
70
470
1500
2700
17.8
17.9
16.8
15.3
1.3
Noise Figure
NF
dB
1.2
1.1
1.2
Input Return Loss
RLin
dB
-15
-6
-5
-9
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
nd
2 Intercept Point
2)
Output Power
Circuit Current
RLout
dB
-6
-7
-14
-16
Po(1dB)
dBm
15.4
16.4
19
19.5
OIP3
dBm
28
29.5
33
32.5
OIP2
dBm
Icc
mA
63
63
38.5
63
63
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
2) OIP2 is measured with two tones (100MHz, 800MHz) at an output power of +0 dBm/tone, 700MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
R5=25 W
C5=10 nF
C1=100 pF
RF IN
R2=5.1 kW
L1=220 nH
(Coil Inductor)
C6=1 uF
L2=220 nH
(Coil Inductor)
AST20S
C2=1 pF
RF OUT
Bottom
C3=100 pF
R4=39 W
C4=100 pF R3=620 W
L3=12 nH
S-parameters & Noise Figure
30
20
S21
0
S(2,2)
S(1,1)
S - parameter [dB]
10
S11
S22
-10
S11
S22
-20
S12
-30
-40
0
500
1000
1500
2000
2500
3000
3500
freq (70.00MHz to 2.700GHz)
Frequency [MHz]
5
1.6
1.5
1.4
Noise Figure (dB)
Stability Factor
4
3
2
1.3
1.2
1.1
1.0
0.9
1
0.8
0
0
500
1000
1500
2000
2500
3000
3500
0.7
0
500
Frequency (MHz)
30/33
1000
1500
2000
2500
3000
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
2300 ~ 2700 MHz
+5 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
2300
2500
2700
dB
15.5
15.3
14.7
dB
1.05
1.05
1.0
RLin
dB
-9
-12
-10
RLout
dB
-20
-17
-13
Po(1dB)
dBm
17.5
17.5
17.5
OIP3
dBm
31
30
33.5
Icc
mA
38
38
38
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
VDD
C6=1 mF
R1=750 W
R4=51 W
C5=10 nF
R2=5.1 kW
L1=15 nH
(Coil Inductor)
C1=15 pF
RF IN
C6=1 uF
L2=15 nH
(Coil Inductor)
AST20S
C2=1.2 pF
RF OUT
Bottom
C3=10 pF
R3=1.1 kW
C4=1 nF
S-parameters & K-factor
30
20
S11
S(2,2)
S(1,1)
S - parameter [dB]
S21
10
0
S11
-10
S22
-20
S12
-30
2000
2200
2400
2600
2800
S22
3000
Frequency [MHz]
freq (2.300GHz to 2.700GHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
31/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Parameter
APPLICATION CIRCUIT
SMATV, 50 ohm
900 ~ 2100 MHz
+3 V
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
rd
3 Intercept Point
1)
Output Power
Circuit Current
Frequency (MHz)
900
1500
2100
dB
14
13.5
13.5
dB
1.5
1.5
1.4
RLin
dB
-6
-6
-11
RLout
dB
-18
-14
-10
Po(1dB)
dBm
5
5
5.5
OIP3
dBm
19
19.5
20
Icc
mA
12
12
12
1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Top
Schematic
VDD
R1=750 W
R4=51 W
C5=10 nF
R2=5.1 kW
C6=1 uF
L2=82 nH
C2=100 pF
RF IN
L1=1.5 nH
C1=1.2 pF
L3=82 nH
AST20S
C3=100 pF
RF OUT
Bottom
C4=100 pF R3=390 W
S-parameters & K-factor
30
10
S21
0
S11
S(2,2)
S(1,1)
S - parameter [dB]
20
S11
S22
-10
S22
-20
S12
-30
0
500
1000
1500
2000
2500
3000
3500
Frequency [MHz]
freq (900.0MHz to 2.100GHz)
5
Stability Factor
4
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
32/33
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012
AST20S
High Gain, Low Noise Amplifier
Noise Parameters
VDS=3V, IDS=30mA
Freq
(Hz)
Fmin
(dB)
Gopt
(Mag.)
Gopt
(Ang.)
Rn/50
0.5e+9
0.03
0.86
-46.3
0.07
1e+9
0.22
0.41
-12.3
0.07
1.5e+9
0.28
0.47
50.8
0.07
2e+9
0.4
0.38
56.7
0.08
2.5e+9
0.52
0.29
73.5
0.08
3e+9
0.54
0.31
90.9
0.08
4e+9
0.48
0.35
111.6
0.08
5e+9
0.71
0.43
130.1
0.07
6e+9
0.83
0.46
139.7
0.07
7e+9
0.82
0.54
148
0.07
8e+9
1.15
0.58
152.5
0.06
9e+9
1.3
0.59
156.1
0.07
10e+9
1.41
0.63
159.7
0.06
Fmin
(dB)
Gopt
(Mag.)
Gopt
(Ang.)
Rn/50
0.5e+9
0
0.87
-48.4
0.07
1e+9
0.18
0.38
-18.6
0.06
1.5e+9
0.18
0.45
62.7
0.06
VDS=3V, IDS=40mA
Freq
(Hz)
33/33
2e+9
0.27
0.34
58.4
0.08
2.5e+9
0.48
0.26
74.3
0.07
3e+9
0.54
0.29
93.2
0.07
4e+9
0.5
0.33
114.7
0.08
5e+9
0.72
0.42
133
0.07
6e+9
0.83
0.45
142.3
0.07
7e+9
0.84
0.53
150
0.06
8e+9
1.15
0.56
154.2
0.06
9e+9
1.32
0.58
157.6
0.07
10e+9
1.42
0.63
161.1
0.06
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
August 2012