ASW103 5-4000 MHz MMIC Amplifier Features Description ·17 dB Gain at 900 MHz The ASW103, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in an SOT-89 package and passes through the stringent DC, RF, and reliability tests. ·17 dBm P1dB at 900 MHz ·30 dBm Output IP3 at 900 MHz ·3.7 dB NF at 900 MHz ·MTTF > 100 Years ·Single Supply ASW103 Package Style: SOT-89 Typical Performance Parameters Frequency Units Application Circuit Typical MHz 900 2000 Gain dB 17 11 S11 dB -9 -9 S22 dB -15 -15 Output IP31) dBm 30 31 Noise Figure dB 3.7 3.9 Output P1dB dBm 17 18 Current mA 44 44 V 3.3 3.3 Device Voltage ·IF ·IF (3.4 V) ·500 ~ 2500 MHz 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. Product Specifications Parameters Testing Frequency Units Gain dB S11 dB S22 Min MHz 16 dBm dB Output P1dB dBm 16 Current mA 39 V 17 -15 29 Noise Figure Device Voltage Max -9 dB Output IP3 Typ 900 30 3.7 4.0 17 44 49 3.3 Pin Configuration Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C Device Voltage +4 V Operating Junction Temperature +150°C Pin No. Function Input RF Power (CW, 50ohm matched)* 25 dBm 1 RF IN 2 GND 3 RF OUT / Bias * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/6 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW103 5-4000 MHz MMIC Amplifier Outline Drawing Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e ASW103 Pxxxx Dimensions (In mm) MIN NOM MAX 1.40 1.50 1.60 0.89 1.04 1.20 0.36 0.42 0.48 0.41 0.47 0.53 0.38 0.40 0.43 4.40 4.50 4.60 1.40 1.60 1.75 3.64 --4.25 2.40 2.50 2.60 2.90 3.00 3.10 0.35 0.40 0.45 0.65 0.75 0.85 1.40 1.50 1.60 Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. Ordering Information Part Number 2/6 Description ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW103 5-4000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT IF 5 +3.3 V 300 450 Magnitude S21 (dB) 25 24 23 21 Magnitude S11 (dB) -15 -14 -12 -11 Magnitude S22 (dB) -13 -15 -14 -14 Output P1dB (dBm) 17 17 17 17 1) 5 ~ 450 MHz 150 Output IP3 (dBm) 29 30 30.5 30 Noise Figure (dB) 3.5 3.8 4.0 3.7 Device Voltage (V) 3.3 Current (mA) 44 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.3 V D1=5.6V Zener Diode C4=1 mF C3=100 pF L1=1 mH R1=2.7 kW RF IN C1=1 mF C2=1 mF RF OUT ASW103 S-parameters & K-factor 30 0 25 S11 (dB) Gain (dB) -5 20 15 -10 10 -15 5 0 0 100 200 300 400 500 -20 0 100 200 Frequency (MHz) 300 400 500 Frequency (MHz) 5 0 4 Stability Factor S22 (dB) -5 -10 3 2 -15 1 -20 0 100 200 300 400 500 0 0 500 Frequency (MHz) 3/6 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW103 5-4000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT IF 70 Magnitude S21 (dB) 25 24 Magnitude S11 (dB) -14 -14 Magnitude S22 (dB) -15 -15 Output P1dB (dBm) 17.5 18 Output IP3 (dBm) 30 31.5 Noise Figure (dB) 4.1 4.3 1) 5 ~ 450 MHz +3.4 V 150 Device Voltage (V) 3.4 Current (mA) 50 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.4 V D1=5.6V Zener Diode C4=1 mF C3=100 pF L1=680 nH R1=2.7 kW C1=1000 pF RF IN C2=1000 pF RF OUT ASW103 S-parameters & K-factor 30 0 25 S11 (dB) Gain (dB) -5 20 15 -10 10 -15 5 0 0 100 200 300 400 500 -20 0 100 200 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 400 500 3 2 1 0 100 200 300 400 500 0 0 500 Frequency (MHz) 4/6 300 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW103 5-4000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 500 900 1750 2000 2400 Magnitude S21 (dB) 21 17 12 11 9 Magnitude S11 (dB) -8.5 -9 -9 -9 -7.5 Magnitude S22 (dB) -18 -15 -15 -15 -13.5 Output P1dB (dBm) 17 17 18 18 19 500 ~ 2500 MHz Output IP3 (dBm) 30 30 31 31 31 +3.3 V Noise Figure (dB) 4.0 3.7 3.7 3.9 4.2 1) Device Voltage (V) 3.3 Current (mA) 44 1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=3.3 V D1=5.6V Zener Diode C4=1 mF C3=100 pF L1=56 nH R1=2.7 kW C1=100 pF RF IN C2=100 pF RF OUT ASW103 S-parameters & K-factor 30 0 25 -40oc 25oc 85oc -5 S11 (dB) Gain (dB) 20 15 -10 -40oc 25oc 85oc 10 -15 5 0 0 500 1000 1500 2000 2500 3000 -20 3500 0 500 1000 Frequency (MHz) 0 5 -5 4 Stability Factor S22 (dB) -10 -15 -20 -40oc 25oc 85oc -25 -30 2000 2500 3000 3500 2500 3000 3500 3 2 1 0 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 Frequency (MHz) Frequency (MHz) 5/6 1500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASW103 5-4000 MHz MMIC Amplifier Gain vs. Temperature Current vs. Temperature 70 16 60 14 12 Gain (dB) Current (mA) 50 40 10 30 Frequency = 2000 MHz 8 20 10 -60 -40 -20 0 20 40 60 80 6 -60 100 -40 -20 Temperature (oC) P1dB vs. Temperature 20 40 60 80 100 Output IP3 vs. Temperature 24 45 22 40 20 35 Output IP3 (dBm) P1dB (dBm) 0 Temperature (oC) 18 16 Frequency = 2000 MHz 30 25 Frequency = 2000 MHz 14 20 12 -60 -40 -20 0 20 40 60 80 100 15 -60 -40 o Temperature ( C) -20 0 20 40 60 80 100 Temperature (oC) Output IP3 vs. Tone Power (Frequency = 2000 MHz) 45 40 Output IP3 (dBm) 35 30 25 -40oc 25oc 85oc 20 15 10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 Pout per Tone (dBm) 6/6 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010