ASB ASW103

ASW103
5-4000 MHz MMIC Amplifier
Features
Description
·17 dB Gain at 900 MHz
The ASW103, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems
up to 4 GHz. The amplifier is available in an SOT-89
package and passes through the stringent DC, RF,
and reliability tests.
·17 dBm P1dB at 900 MHz
·30 dBm Output IP3 at 900 MHz
·3.7 dB NF at 900 MHz
·MTTF > 100 Years
·Single Supply
ASW103
Package Style: SOT-89
Typical Performance
Parameters
Frequency
Units
Application Circuit
Typical
MHz
900
2000
Gain
dB
17
11
S11
dB
-9
-9
S22
dB
-15
-15
Output IP31)
dBm
30
31
Noise Figure
dB
3.7
3.9
Output P1dB
dBm
17
18
Current
mA
44
44
V
3.3
3.3
Device Voltage
·IF
·IF (3.4 V)
·500 ~ 2500 MHz
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Testing Frequency
Units
Gain
dB
S11
dB
S22
Min
MHz
16
dBm
dB
Output P1dB
dBm
16
Current
mA
39
V
17
-15
29
Noise Figure
Device Voltage
Max
-9
dB
Output IP3
Typ
900
30
3.7
4.0
17
44
49
3.3
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to +85°C
Storage Temperature
-40 to +150°C
Device Voltage
+4 V
Operating Junction Temperature
+150°C
Pin No.
Function
Input RF Power (CW, 50ohm matched)*
25 dBm
1
RF IN
2
GND
3
RF OUT / Bias
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/6
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
February 2010
ASW103
5-4000 MHz MMIC Amplifier
Outline Drawing
Part No.
Lot No.
Symbols
A
L
b
b1
C
D
D1
E
E1
e1
H
S
e
ASW103
Pxxxx
Dimensions (In mm)
MIN
NOM
MAX
1.40
1.50
1.60
0.89
1.04
1.20
0.36
0.42
0.48
0.41
0.47
0.53
0.38
0.40
0.43
4.40
4.50
4.60
1.40
1.60
1.75
3.64
--4.25
2.40
2.50
2.60
2.90
3.00
3.10
0.35
0.40
0.45
0.65
0.75
0.85
1.40
1.50
1.60
Pin No.
Function
1
RF IN
2
GND
3
RF OUT / Bias
Mounting Recommendation (in mm)
Note: 1. The number and size of ground via holes in
a circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes
be placed on the bottom of the lead pin 2
and exposed pad of the device for better RF
and thermal performance, as shown in the
drawing at the left side.
Ordering Information
Part Number
2/6
Description
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
February 2010
ASW103
5-4000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
IF
5
+3.3 V
300
450
Magnitude S21 (dB)
25
24
23
21
Magnitude S11 (dB)
-15
-14
-12
-11
Magnitude S22 (dB)
-13
-15
-14
-14
Output P1dB (dBm)
17
17
17
17
1)
5 ~ 450 MHz
150
Output IP3 (dBm)
29
30
30.5
30
Noise Figure (dB)
3.5
3.8
4.0
3.7
Device Voltage (V)
3.3
Current (mA)
44
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.3 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100 pF
L1=1 mH
R1=2.7 kW
RF IN
C1=1 mF
C2=1 mF
RF OUT
ASW103
S-parameters & K-factor
30
0
25
S11 (dB)
Gain (dB)
-5
20
15
-10
10
-15
5
0
0
100
200
300
400
500
-20
0
100
200
Frequency (MHz)
300
400
500
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
0
100
200
300
400
500
0
0
500
Frequency (MHz)
3/6
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
February 2010
ASW103
5-4000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
IF
70
Magnitude S21 (dB)
25
24
Magnitude S11 (dB)
-14
-14
Magnitude S22 (dB)
-15
-15
Output P1dB (dBm)
17.5
18
Output IP3 (dBm)
30
31.5
Noise Figure (dB)
4.1
4.3
1)
5 ~ 450 MHz
+3.4 V
150
Device Voltage (V)
3.4
Current (mA)
50
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.4 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100 pF
L1=680 nH
R1=2.7 kW
C1=1000 pF
RF IN
C2=1000 pF
RF OUT
ASW103
S-parameters & K-factor
30
0
25
S11 (dB)
Gain (dB)
-5
20
15
-10
10
-15
5
0
0
100
200
300
400
500
-20
0
100
200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
400
500
3
2
1
0
100
200
300
400
500
0
0
500
Frequency (MHz)
4/6
300
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
February 2010
ASW103
5-4000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
500
900
1750
2000
2400
Magnitude S21 (dB)
21
17
12
11
9
Magnitude S11 (dB)
-8.5
-9
-9
-9
-7.5
Magnitude S22 (dB)
-18
-15
-15
-15
-13.5
Output P1dB (dBm)
17
17
18
18
19
500 ~ 2500 MHz
Output IP3 (dBm)
30
30
31
31
31
+3.3 V
Noise Figure (dB)
4.0
3.7
3.7
3.9
4.2
1)
Device Voltage (V)
3.3
Current (mA)
44
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
2
Board Layout (FR4, 40x40 mm , 0.8T)
Schematic
Vcc=3.3 V
D1=5.6V
Zener Diode
C4=1 mF
C3=100 pF
L1=56 nH
R1=2.7 kW
C1=100 pF
RF IN
C2=100 pF
RF OUT
ASW103
S-parameters & K-factor
30
0
25
-40oc
25oc
85oc
-5
S11 (dB)
Gain (dB)
20
15
-10
-40oc
25oc
85oc
10
-15
5
0
0
500
1000
1500
2000
2500
3000
-20
3500
0
500
1000
Frequency (MHz)
0
5
-5
4
Stability Factor
S22 (dB)
-10
-15
-20
-40oc
25oc
85oc
-25
-30
2000
2500
3000
3500
2500
3000
3500
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
Frequency (MHz)
Frequency (MHz)
5/6
1500
Frequency (MHz)
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
February 2010
ASW103
5-4000 MHz MMIC Amplifier
Gain vs. Temperature
Current vs. Temperature
70
16
60
14
12
Gain (dB)
Current (mA)
50
40
10
30
Frequency = 2000 MHz
8
20
10
-60
-40
-20
0
20
40
60
80
6
-60
100
-40
-20
Temperature (oC)
P1dB vs. Temperature
20
40
60
80
100
Output IP3 vs. Temperature
24
45
22
40
20
35
Output IP3 (dBm)
P1dB (dBm)
0
Temperature (oC)
18
16
Frequency = 2000 MHz
30
25
Frequency = 2000 MHz
14
20
12
-60
-40
-20
0
20
40
60
80
100
15
-60
-40
o
Temperature ( C)
-20
0
20
40
60
80
100
Temperature (oC)
Output IP3 vs. Tone Power (Frequency = 2000 MHz)
45
40
Output IP3 (dBm)
35
30
25
-40oc
25oc
85oc
20
15
10
-6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10 11
Pout per Tone (dBm)
6/6
ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223
February 2010