BLV20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG FEATURES: • Common Emitter • PG = 12 dB at 8.0 W/175 MHz • Omnigold™ Metalization System B .112 x 45° A E C Ø.125 NOM. FULL R J .125 B MAXIMUM RATINGS E C IC 1.0 A VCBO 65 V VCEO 35 V VCES 65 V VEBO 4.0 V D E F I GH MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 PDISS 20 W @ TC = 25 ° C TJ -65 °C to +200 °C G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 TSTG -65 °C to +150°C J .240 / 6.10 .255 / 6.48 θJC 8.75 °C/W CHARACTERISTICS .280 / 7.11 I TC = 25 °C NONETEST CONDITIONS SYMBOL .385 / 9.78 E MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCES IC = 2.0 mA 65 V BVCEO IC = 10 mA 35 V BVEBO IE = 1.0 mA 4.0 V ICBO VCB = 36 V hFE VCE = 5.0 V CC VCB = 28 V PG ηC VCC = 28 V IC = 400 mA 10 f = 1.0 MHz POUT = 8.0 W f = 175 MHz mA 100 --- 10 pF 60 dB % 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 REV. B 1/1