BLV57 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV57 is Designed for use as push-pull amplifier, primarily in linear UHF TV transmitting Applications. PACKAGE STYLE .400 8L FLG C D A B F U LL R FEATURES: G • Input Matching Network • Common emitter • Omnigold™ Metalization System with eutectic die bonding E .19 25 .125 K 2.0 A PDISS 77 W @ TC = 25 C .360 / 9.14 TSTG -65 °C to +150 °C θJC 2.27 °C/W .130 / 3.30 F .380 / 9.65 .390 / 9.91 G .735 / 18 .6 7 .765 / 19 .4 3 H .645 / 16 .3 8 .655 / 16 .6 4 I .895 / 22 .7 3 .905 / 22 .9 9 J .420 / 10 .6 7 .430 / 10 .9 2 K .003 / 0.08 .007 / 0.18 L .120 / 3.05 .130 / 3.30 M .159 / 4.04 .175 / 4.45 .395 / 10 .0 3 .405 / 10 .2 9 .280 / 7.11 N O CHARACTERISTICS ORDER CODE: ASI10646 O TC = 25 C NONETEST CONDITIONS SYMBOL .075 / 1.91 .065 / 1.65 E -65 °C to +200 °C .125 / 3.18 .115 / 2.92 D TJ inche s / m m .030 / 0.76 C 27 V M A X IM U M inche s / m m B VCE J M IN IM UM A 50 V I N D IM VCESM 4 x .0 60 R H L M MAXIMUM RATINGS IC O F MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 27 V BVCES IC = 10 mA 50 V BVEBO IE = 5.0 mA 3.5 V ICES VE = 27 V hFE VCE = 25 V IC = 850 mA VCB = 25 V IE = 1.7 A 2.5 VCB = 25 V IE = 850 mA 2.5 fT PG IMD1 VCE = 25 V POUT = 6.0 W 10 IC = 850 mA --- 15 f = 860 MHz 8.0 -60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. mA GHz dB dBc REV. B 1/1