BLW83 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW83 is Designed for use in transmitting amplifiers operatimg in theh.f. and v.h.f. bands and for applications as linear amplifier in class-A and AB. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System A E C B E Ø.125 NOM. FULL R J .125 C D E F I GH MAXIMUM RATINGS IC 3.0 A VCES 65 V VCEO 36 V B .785 / 19.94 C .720 / 18.29 .730 / 18.54 4.0 V D .970 / 24.64 .980 / 24.89 VEBO DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .385 / 9.78 E PDISS 80 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.2 °C/W F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .240 / 6.10 .255 / 6.48 TC = 25 °C NONETEST CONDITIONS SYMBOL .180 / 4.57 .280 / 7.11 I J CHARACTERISTICS MAXIMUM MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 10 mA 65 V BVCEO IC = 50 mA 36 V BVEBO IE = 10 mA 4.0 V ICES VCE = 36 V hFE VCE = 5.0 V Cob VCB = 12.5 V GPE IMD3 VCC = 26 V POUT = 10 W (PEP) IC = 1.25 A 10 f = 1.0 MHz ICQ = 25 mA f = 30 MHz 5 mA 100 --pF 100 20 21 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- dB dB REV. A 1/1