BCDSEMI AT1040

Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
General Description
Features
BCD ITVS (Integrated Transient Voltage Suppression)
devices are designed and built using a BCD
proprietary process based on BCD standard
technology. These devices integrate the various diodes,
transistors and resistors required to build these ITVS
products. These diodes and transistors feature low
parasitic resistance and the diodes also exhibit low
capacitance. Using these devices, BCD is able to
design voltage clamping products where low
capacitance associated with low dynamic resistance is
required.
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The BCD AT1040 is a general purpose, high
performance and low cost device suitable for
protecting high speed data interfaces. The AT1040 is a
unique design integrating low capacitance steering
diodes and a clamping cell, specially created to protect
sensitive components connected to data and
transmission lines.
AT1040
Low Clamping Voltage:
Typical 6.5V at 10A 100ns, TLP, VCC to VSS
Typical 9V at 10A 100ns, TLP, I/O to VSS
9.5V at 12A 8μs/20μs, VCC to VSS
9.6V at 6A 8μs/20μs, I/O to VSS
IEC 61000-4-2:
±30kV (VCC to VSS, Air)
±30kV (VCC to VSS, Contact)
IEC 61000-4-2:
+28kV, -20kV (I/O to VSS, Air)
+25kV, -16kV (I/O to VSS, Contact)
IEC 61000-4-5: ±12A (VCC to VSS)
IEC 61000-4-5: ±6A (I/O to VSS)
Input Capacitance from VCC to VSS: 0.65pF
TLP Dynamic Resistance, VCC to VSS: 0.15Ω
Monolithic Silicon Technology
Application
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The AT1040 is available in SOT-23-6 package. This
package allows simple and optimal placement in
existing high-speed PCB layout.
USB 2.0 Power/Data Lines Protection
HDMI 1.3, High Definition Multi Media
IEEE 1394
Laptop and Personal Computers
Flat Panel Displays
Video Graphics Cards
SIM Ports
SOT-23-6
Figure 1. Package Type of AT1040
Aug. 2012
Rev. 2.0
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
AT1040
Pin Configuration
K6 Package
(SOT-23-6)
Pin 1 Mark
1
6
2
5
3
4
Figure 2. Pin Configuration of AT1040 (Top View)
Circuit Diagram
Figure 3. Circuit Diagram of AT1040
Aug. 2012
Rev. 2.0
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
AT1040
Ordering Information
AT1040 A
-
A
Circuit Type
G1: Green
Package
K6: SOT-23-6
TR: Tape & Reel
5.0: Fixed Output 5.0V
Package
Temperature
Range
SOT-23-6
-55 to 85°C
Part Number
AT1040K6-5.0TRG1
Marking ID
GJM
Packing Type
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Peak Pulse Current (tp 8μs/20μs), VCC to VSS
IPP(VCC-VSS)
±12
A
Peak Pulse Current (tp 8μs/20μs) , I/O to VSS
IPP(I/O-VSS)
Operating Voltage (DC)
IEC61000-4-2 ESD (Air)
IEC61000-4-2 ESD (Contact)
VCC to VSS
I/O to VSS, VCC
Floating
VCC to VSS
I/O to VSS, VCC
Floating
±6
A
5.5
±30
V
+28/-20
kV
±30
+25/-16
kV
12
A
120
W
6
A
60
W
260
ºC
Operating Temperature
-55 to 85
ºC
Storage Temperature
-55 to 150
ºC
VCC to VSS
IEC61000-4-5 (Lightning)
I/O to VSS
Lead Temperature (Soldering, 10sec)
TLEAD
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Aug. 2012
Rev. 2.0
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
AT1040
Electrical Characteristics
TA=25ºC, unless otherwise specified.
Parameter
Symbol
Working Voltage, VCC to VSS
Channel Leakage Current
Reverse Breakdown Voltage, VCC to VSS
Holding Voltage
Clamping Voltage (Lightning) VCC to VSS
(IEC61000-4-5)
I/O to VSS
VCC to VSS
Trigger Voltage
I/O to VSS
VCC to VSS
ESD Clamping Voltage
I/O to VSS
Differential
Clamping VCC to VSS
Resistance
I/O to VSS
Channel Input Capacitance
IR
VBR
VH
Conditions
Min
Pin 5 to Pin 2
VCC=5V,VSS=0V
IBV=1mA
-0.7
Max
Unit
5.0
1
V
μA
V
V
V
V
V
V
V
V
5.5
5.25
At 12A
At 6A
9.5
9.6
8
9
7
9
0.1
VTRIG
At 10A, TLP, 100ns
RDIFF-F
I/O to VSS
Typ
Ω
Ω
0.25
VI/O=2.5V,VCC=5V,
VSS=0V,f=1MHz
CI/O
0.65
1.1
pF
Typical Performance Characteristics
TA=25°C, unless otherwise specified.
10
7.5
7.0
6.5
BV
VTRIG
6.0
VH
VCC to VSS
I/O to VSS
8
Current from I/O to VSS (A)
8.0
Current from VCC to VSS (A)
BV, Trigger Voltage, Holding Voltage (V)
8.5
6
4
2
5.5
5.0
-60
0
-40
-20
0
20
40
60
80
100
120
140
0
o
Temperature ( C)
1
2
3
4
5
6
7
8
9
Voltage from VCC to VSS (V)
Voltage from I/O to VSS (V)
Figure 4. BV, Trigger Voltage, Holding Voltage
vs. Temperature
Aug. 2012
Figure 5. Current vs. Voltage
Rev. 2.0
BCD Semiconductor Manufacturing Limited
4
10
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
AT1040
Typical Performance Characteristics (Continued)
TA=25°C, unless otherwise specified.
10.0
1.0
f=1MHz, VCC=4.8V, VSS=0V
9.5
Input Capacitance (pF)
Clamping Voltage (V)
0.8
9.0
8.5
8.0
IEC 61000-4-5 (Lightning)
0.6
0.4
0.2
7.5
7.0
0.0
1
2
3
4
5
6
7
0
1
Current from I/O to VSS (A)
Figure 6. Clamping Voltage
vs. Current from I/O to VSS (8μs/20μs)
VCLAMPING
=9.1V
5V/div
Current
Waveform,
(Surge, 8x20 μs,
IPP=6A)
2A/div
Current
Waveform,
(Surge, 8x20 μs,
IPP=12A)
5A/div
10μs/div
Time
Figure 8. Waveform of I/O to GND (Positive)
Aug. 2012
3
4
5
Figure 7. Input Capacitance vs. Input Voltage
VCLAMPING
=9.2V
2V/div
Time
2
Input Voltage (V)
10μs/div
Figure 9. Waveform of VCC to VSS (Positive)
Rev. 2.0
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<1.1pF, VCC
AT1040
Mechanical Dimensions
SOT-23-6
Unit:
0°
2.820(0.111)
8°
3.020(0.119)
0.200(0.008)
0.300(0.012)
0.400(0.016)
6
mm(inch) M I N
mm(inch) MAX
5
4
2
3
0.300(0.012)
0.600(0.024)
Pin 1 Mark
1
0.700(0.028)REF
0.950(0.037)TYP
0.000(0.000)
0.150(0.006)
1.800(0.071)
2.000(0.079)
0.100(0.004)
0.200(0.008)
0.900(0.035) 1.450(0.057)
MAX
1.300(0.051)
Aug. 2012
Rev. 2.0
BCD Semiconductor Manufacturing Limited
6
BCD Semiconductor Manufacturing Limited
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