BELLING BL8593

BL8593
P-Channel MOSFET with 0.12V Schottky Diode
DESCRIPTION
FEATURES





BL8593 is designed for battery charging controller,
which features P-channel MOSFET characteristics
and a 0.12V Schottky diode for reverse current
blocking. Such reverse current blocking feature cut
off the current when source voltage is removed, or
lower than drain voltage, no matter the gate
voltage indicating the P-MOSFET on or off.
PMOSFET with SBD for reverse current blocking
0.12V Schottky diode forward voltage
Range of operation input voltage: Max 12V
Charging current up to 650mA
Environment Temperature: -20C~85C
APPLICATIONS

BL8593 is also suitable for high side switch in a
system with multi power supplies, when isolating
different power supplies becomes essential.
Cell phone and other portable device
FUNCTION DIAGRAM
BL8593 can block reverse voltage as high as 10V. So
it is safe enough for mobile phone system or other
portable device powered by 1 cell Li-ion battery.
BL8593 is available in DFN2x2-6L (2 type of PIN
configuration), SC70-5 and DFN1x1-5. Especially
with the package DFN1x1-5, BL8593 make itself the
smallest package available in the world.
ORDERING INFORMATION / PIN CONFIGURATION / MARKING
BL8593CKCTR
BL8593CBKCTR
BL8593CA5TR
BL8593CKDTR
DFN2x2-6L
DFN2x2-6L
(compatible to
DFN2x2 pin out)
SC70-5
DFN1x1-5L
(compatible to DFN2x3
pin out)
1. A
2. S
3. G
OA
YW
6. K
1. A
5. D
2. NC
4. NC
3. D
OA|
YW
6. K
1. S
5. G
2. G
4. S
3. NC
5. NC
OA
YW
4. D
Notice: YW means the year and week parts being manufactured, subjected to change. OA is the
code of the product, it will not be changed on any part.
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1
BL8593
ABSOLUTE MAXIMUM RATING
Parameter
Forward Voltage(Source-Drain)
Gate-Source Voltage (MOSFET)
Continuous Drain Current
Pulsed Drain Current (MOSFET)
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Symbol
VSD
VGS
ID
IDM
PD
TJ
Tstg
5 sec
Steady State
Unit
12
-8~+0.3
0.8
V
-8~+0.3
0.5
mA
A
W
1
1
0.5
−20 to 125
-40 to 150
260C, 10s
C
THERMAL RESISTANCE RATING
Parameter
t ≤ 5 sec
junction-to-Ambient
Steady State
Junction to Case
Steady State
Device
DFN2x2
DFN1x1
SC70-5
DFN2x2
DFN1x1
SC70-5
DFN2x2
DFN1x1
SC70-5
Symbol
RthJA
RthJC
Typical
50
77
250
105
160
330
20
33
150
Maximum
60
95
280
120
200
400
30
40
175
Unit
C /W
ELECTRICAL CHARACTERISTICS
Tj=25C
Symbol
Parameter
Conditions
Vth
Threshold Voltage
Ids=-10uA, Vds=Vgs
Igs
Gate-Source Leakage current
Vgs=8V
IDss1
PMOS off-state leakage
Vgs=0, Vs=9V, Vd=0V
Min
Typ
Max
Unit
-1.0
-0.7
-0.4
V
0
12
20
uA
0.5
5
uA
IDss2
PMOS reverse block leakage
Vg=0, Vs=0V, Vd=4.5V
2
10
uA
Idson
On –state drain current
Vs=5V, Vg=1V, Vd=4V
-800
-650
-500
mA
Rdson
Vds/Idson
Vs=5V, Vg=1V, Vd=4V
1.25
1.5
2
ohm
Vfsbd
Forward voltage of schottky
Vs=4V, Vg=0V, Ids=0,
0.08
0.12
0.16
V
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BL8593
TYPICAL PERFORMANCE CHARACTERISTICS
T=25°C unless specified.
Output Characteristics
Vgs=-1v
Vgs=-2v
Vgs=-3v
On Resistance Vs Vgs
Vgs=-4v
800
25
700
20
500
rdson (ohm)
-Ids (mA)
600
400
300
200
15
10
5
100
0
0
0
1
2
3
4
0
5
1
2
Dropout Voltage (Vds) Vs. Charge
current (Ids), T = 25oC
4
5
Dropout Voltage (Vds) Vs. Charge
current (Ids), T = 80oC
1.8
1.4
Vgs=-5V
1.6
Vgs=-3V
1.2
Vgs=-5V
1.2
Vgs=-4V
1.4
Vgs=-4V
Vgs=-3V
1
Vgs=-2V
1
-Vds (V)
-Vds (V)
3
-Vgs (V)
-Vds (V)
Vgs=-1V
0.8
Vgs=-2V
0.8
Vgs=-1V
0.6
0.6
0.4
0.4
0.2
0.2
0
0
0
100
200
300
400
500
600
0
100
200
-Ids (mA)
Dropout Voltage (Vds) Vs. Charge
current (Ids), T = 125oC
400
500
600
Dropout Voltage (Vds) Vs. Charge
current (Ids), T = -25oC
1.8
1
1.6
1.4
Vgs=-5V
0.9
Vgs=-5V
Vgs=-4V
0.8
Vgs=-4V
0.7
Vgs=-3V
0.6
Vgs=-2V
Vgs=-3V
1.2
Vgs=-2V
1
-Vds (V)
-Vds (V)
300
-Ids (mA)
Vgs=-1V
0.8
0.6
Vgs=-1V
0.5
0.4
0.3
0.4
0.2
0.2
0.1
0
0
0
100
200
300
400
500
600
0
-Ids (mA)
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100
200
300
-Ids (mA)
3
400
500
600
BL8593
Charge Current (Ids) Vs. Gate
Voltage
Schottky Diode Forward Voltage
0.18
700
600
400
0.16
25 C
0.14
80 C
0.12
125 C
Vf (V)
-Ids (mA)
500
-25 C
300
0.1
0.08
0.06
200
0.04
100
0.02
0
0
0
1
2
3
4
5
-50
0
-Vgs (V)
50
100
Temperature (oC)
Charge current Vs USB voltage tested on actual cell phone powered by MTK chipset
Charge current (mA)
Icharge
500
450
400
350
300
250
200
150
100
50
0
5
5.5
6
6.5
USB Voltage (V)
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4
7
7.5
8
150
BL8593
PACKAGE OUTLINE
Package
DFN2x2-6 single pad
Devices per reel
3000
Unit
mm
Devices per reel
3000
Unit
mm
Package specification：
Package
DFN2x2-6 dual pad
Package specification：
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5
BL8593
Package
DFN1x1-5
Devices per reel
3000
Unit
mm
Devices per reel
3000
Unit
mm
Package specification：
Package
SC70-5
`Package specification：
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