BEREX BCL016B

BCL016B
SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm)
The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 micron gate
width making the product ideally suited for applications requiring very low noise and high associated gain, in
frequencies of up to 40 GHz. The BCL016B offers high insertion gain and a low noise figure for broadband
applications. The BCL016B is produced using state of the art metallization with SI 3N4 passivation and is screened to
assure reliability
PRODUCT FEATURES




Low 0.4dB typical noise figure @12 GHz
High 13.5dB Typical associated Gain @12 GHz
High Pin of up to 20dBm
0.15 X 160 Micron Recessed Gate
APPLICATIONS


Commercial
Military / Hi-Rel.

Test & Measurement
ELECTRICAL CHARACTERISTICS (Ta = 25° C)
SYMBOL
PARAMETER/TEST CONDITIONS
TEST
FREQ.
NF
Noise Figure (Vds = 2V, Id = 10mA)
12 GHz
18 GHz
GA
Associated Gain (Vds = 2V, Id = 10mA)
12 GHz
18 GHz
P1dB
Output Power @ p1dB (Vds = 2V, Id = 10mA)
12 GHz
IDSS
MIN.
TYPICAL
Max.
UNIT
0.4
0.6
dB
12.5
10.5
13.5
11.5
dB
13
14.5
dBm
Saturated Drain Current (Vgs = 0V, Vds = 2V)
50
mA
GM
Transconductance (Vds = 2V, Vgs = -0.3V)
120
mS
VP
Pinch-off Voltage (Vds = 2V, Id = 200µA)
-0.7
V
BVGD
Gate-Drain Breakdown Voltage, (Ig = -200 µA, source open)
9
V
BVGS
Gate-Source Breakdown Voltage, (Ig = -200 µA, drain open)
6
V
RTH
Thermal Resistance, junction to back side
(Au-Sn Eutectic Attach)
270
° C/W
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7
BCL016B
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
VDS
VGS
IDS
IGSF
PIN
TCH
TSTG
PT
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
5V
-3 V
50 mA
30 mA
20 dBm
150° C
-60° C - 150° C
200 mW
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
S-PARAMETERS (Vds = 2 V, Ids = 10 mA)
Freq
[GHz]
S11
[MAG]
S11
[Ang]
S21
[MAG]
S21
[Ang]
S12
[MAG]
S12
[Ang]
S22
[MAG]
S22
[Ang]
1
0.99
-11.25
5.95
169.63
0.017
83.73
0.54
-5.90
2
0.98
-22.22
5.93
160.06
0.033
76.58
0.53
-11.65
3
0.97
-32.54
5.68
151.26
0.048
70.53
0.51
-17.14
4
0.95
-44.55
5.73
142.08
0.062
64.57
0.48
-21.53
5
0.93
-54.26
5.52
133.35
0.076
58.37
0.44
-27.50
6
0.91
-65.76
5.59
124.70
0.089
53.16
0.40
-32.21
7
0.88
-79.02
5.45
114.83
0.101
45.48
0.33
-42.00
8
0.85
-90.99
5.42
106.08
0.113
40.18
0.28
-45.56
9
0.82
-101.41
5.31
97.75
0.125
33.41
0.23
-58.00
10
0.78
-116.54
5.22
87.78
0.133
26.50
0.15
-73.89
11
0.74
-131.03
5.13
78.33
0.143
19.24
0.11
-103.09
12
0.68
-150.07
5.00
66.81
0.151
10.38
0.13
-157.16
13
0.66
-169.47
4.69
56.28
0.153
2.15
0.18
164.27
14
0.63
168.75
4.46
45.46
0.157
-6.54
0.26
148.69
15
0.64
145.31
4.10
33.81
0.154
-16.06
0.36
135.43
16
0.66
124.37
3.70
23.23
0.148
-24.06
0.44
126.12
17
0.69
102.63
3.30
11.86
0.141
-32.66
0.51
119.95
18
0.73
88.34
2.85
3.09
0.130
-38.61
0.57
111.43
19
0.76
75.06
2.48
-5.82
0.120
-43.78
0.62
106.03
20
0.80
59.85
2.12
-15.00
0.109
-48.60
0.65
101.91
21
0.82
52.72
1.80
-21.27
0.100
-50.84
0.67
98.55
22
0.84
42.62
1.52
-28.44
0.093
-53.53
0.69
96.42
23
0.86
35.06
1.23
-34.89
0.084
-57.23
0.71
92.69
24
0.89
32.73
1.04
-38.66
0.076
-60.50
0.73
90.55
25
0.91
24.09
0.86
-43.76
0.062
-61.13
0.76
89.32
26
0.93
19.10
0.69
-48.13
0.054
-60.20
0.77
88.42
NOTE: S-parameters include 12 mil gold bond wires: 1 gate wire, 1 drain wire, 4 source wires. Reference planes are at the edge
of substrates shown in the “Wire Bonding Information” figure below.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7
BCL016B
NOISE PARAMETERS (Vds = 2 V, Ids = 10 mA)
FREQUENCY
(GHz)
NF MIN.
(dB)
GAMMA OPT. (Mag.)
GAMMA OPT. (Ang.)
Associated
Gain (dB)
Normalized Rn
2
0.16
0.827
3.649
20.460
0.188
3
0.18
0.810
15.551
19.580
0.181
4
0.19
0.783
27.376
18.740
0.171
5
0.20
0.752
30.667
17.920
0.164
6
0.21
0.712
34.528
17.140
0.156
7
0.23
0.668
36.600
16.390
0.149
8
0.24
0.623
37.402
15.670
0.143
9
0.26
0.582
33.305
14.990
0.143
10
0.30
0.519
37.280
14.490
0.128
11
0.35
0.449
37.264
13.920
0.124
12
0.39
0.395
39.953
13.430
0.111
13
0.43
0.318
44.861
12.970
0.103
14
0.47
0.228
55.706
12.600
0.087
15
0.51
0.105
88.026
12.210
0.073
16
0.55
0.113
-164.031
11.860
0.061
17
0.59
0.287
-126.824
11.580
0.062
18
0.61
0.461
-106.229
11.290
0.098
19
0.67
0.606
-89.016
10.980
0.201
20
0.71
0.703
-73.513
10.700
0.304
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7
BCL016B
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
VDS = 2 V, IDS = 10 mA (Tuned for Power)
WIRE BONDING INFORMATION
Always follow wire bonding diagrams recommended by BeRex for each device to achieve optimum device
performance and reliability. As a general rule, bonding temperature should be kept to a maximum of 280°C for no
longer than 2 minutes for all bonding wires.
Using 1 mil. Diameter, Au bonding wires.
1. Gate to input transmission line
- Length and Height : 500 µm x 250 µm
- Number of wire(s): 1
2. Drain to output transmission line
- Length and Height : 500 µm x 250 µm
- Number of wire(s) : 1
3. Source to ground plate
- Length and Height : 350 µm x 200 µm
- Number of wire(s) : 4
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7
BCL016B
HANDLING PRECAUTIONS:
GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD
precautions must be taken whenever you are handling these devices. It is critically important that all work
surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to
prevent ESD damage.
DIE ATTACH RECOMMENDATIONS:
BeRex recommends the “Eutectic” die attach using Au/Sn (80/20) pre-forms. The die attach station must have
accurate temperature control, and the operation should be performed with parts no hotter than 300°C for less
than 10 seconds. An inert forming gas (90% N 2/10% H2) or clean, dry N2 should be used.
Use of conductive epoxy (gold or silver filled) may also be acceptable for die-attaching low power devices.
SHIPPING & STORAGE:
BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a
sealed metallized bag. This packaging is designed to provide a reasonable measure of protection from both
mechanical and ESD damage.
Chip devices should be stored in a clean, dry Nitrogen gas environment at room temperature until they are
required for assembly. Only open the shipping package or perform die assembly in a work area with a class 10,000
or better clean room environment to prevent contamination of the exposed devices.
CAUTION:
THIS PRODUCT CONTAINS GALLIUM ARSENIDE (GaAs) WHICH CAN BE HAZARDOUS TO THE HUMAN BODY AND THE
ENVIRONMENT. THEREFORE, IT MUST BE HANDLED WITH CARE AND IN ACCORDANCE WITH ALL GOVERNMENTAL
AND COMPANY REGULATIONS FOR THE SAFE HANDLING AND DISPOSAL OF HAZARDOUS WASTE. DO NOT DO NOT
BURN, DESTROY, CUT, CRUSH OR CHEMICALLY DISSOLVE THE PRODUCT. DO NOT LICK THE PRODUCT OR IN ANY
WAY ALLOW IT TO ENTER THE MOUTH. EXCLUDE THE PRODUCT FROM GENERAL INDUSTRIAL WASTE OR
GARBAGE AND DISPOSE OF ONLY IN ACCORDANCE TO APPLICABLE LAWS AND/OR ORDINANCES.
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
WITHOUT THE EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 T: (408) 452-5595; F: (408) 452-5596 Nov. 2012
Specifications are subject to change without notice. ©BeRex 2012
Rev. 1.7