CHENDA DB3

DB3
BIDIRECTIONAL TRIGGER DIODE
Reverse Voltage - 32 Volts
DO-41
0.107 (2.7)
0.080 (2.0)
DIA.
FEATURES
A-405
1.0 (25.4)
MIN.
Power: 150mW
The plastic package
VBO:28-36V version
Low breakover current
High temperature soldering guaranteed
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
0.205 (5.2)
0.160(4.1)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
MECHANICAL DATA
0.034 (0.86)
0.028 (0.70)
DIA.
0.025 (0.65)
0.021 (0.55)
DIA.
Dimensions in inches and (millimeters)
Case: JEDEC DO-41/A-405 plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:DO-41 0.012 ounce, 0.33gram
A-405 0.008 ounce, 0.23gram
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
MDD Catalog Number
Breakover voltage *
Breakover voltage symmetry
Dynamic breakover voltage *
Output voltage *
Breakover current *
Rise time *
Leakage current *
Power dissipation on printed circuit
Repetitive peak on-state current
Thermal Resistances from Junction to ambient
Thermal Resistances from Junction to lead
Operating junction and storage temperature range
VALUE
TEST
CONDITION
SYMBOLS
C=22nF **
C=22nF **
(NOTE 1)
DIAGRAM2
C=22nF **
DIAGRAM3
VR=0.5VBO
TA=65 C
tp=20µs
f=100Hz
VBO
I+VBOI-I-VBO I
I∆V+I
VO
IBO
tr
IB
Pd
Min.
28
-3
5
5
Typ.
32
Max.
36
3
UNITS
10
150
VOLTS
VOLTS
VOLTS
VOLTS
µA
µS
µA
mW
ITRM
2
A
RΘJA
RΘJL
TJ,TSTG
400
150
125
* :Electrical characteristic appoicaboe in forward and reverse directions.
** :Connected in parallel with the devices.
Note 1:IBO from IBO to 10mA
MDD ELECTRONIC
100
1.5
-40
C/W
C
RATINGS AND CHARACTERISTIC CURVES DB3
FIG. 1-POWER DISSIPATION VERSUS AMBIENT
TEMPERATURE(MAXIMUM VALUES)
DIAGRAM 1:CURRENT-VOLTAGE CHARACTERISTICS
160
+ IF
140
IBO
IB
-V
120
P,POWER DISSIPATION,mW
10mA
+V
0.5VBO
∆V
100
80
60
40
20
0
VBO
0
10
20
30
40
50
60
70
80
90
100
110
120
130
AMBIENT TEMPERATURE, C
FIG. 2-PEAK PULSE CURRENT VERSUS PULSE
DURATION (MAXIMUM VALUES)
- IF
ITRM,PEAK PULSE CURRENT,A
2
DIAGRAM 2:TEST CIRCUIT OUTPUT VOLTAGE
10 KΩ
220 V
50 Hz
500 KΩ
D.U.T
Vo
0.1µF
R=20Ω
1
0.1
0.01
10
100
1000
10000
tp,PULSE DURATION,µs
FIG. 3-RELATIVE VARIATION OF VBO VERSUS JUNCTION
TEMPERATURE(TYPICAL VALUES)
10%
tr
VBO[Tj]
90%
RELATIVE VARIATION OF VBO
IP
VBO[Tj=25 C]
DIAGRAM 3:TEST CIRCUIT SEE DIAGRAM 2.ADJUST R FOR IP=0.5A
1.08
1.06
1.04
1.02
1.00
25
50
75
Tj,JUNCTION TEMPERATURE, C
MDD ELECTRONIC
100
125
Tj( C)