DL5817 THRU DL5819 SURFACE MOUNT SCHOTTKY BARRIER RECTI FI ERS V O L T AG E R ANG E : 2 0 - - - 4 0 V CURRENT: 1.0 A FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications DO-213AB SOLDERABLE ENDS D1 2.6± 0.15 0 D2=D1 ＋ －0.20 D2 The plastic material carries U/L recognition 94V-0 MECHANICAL DATA 0.5± 0.1 0.5± 0.1 Case:JEDEC DO--213AB,molded plastic Terminals: Solderable per MIL- STD-202,method 208 Polarity: Color band denotes cathode Weight: 0.0046 ounces,0.116 grams Mounting position: Any 4.9± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. MDD Catalog Number DL5817 DL5818 DL5819 UNITS Maximum recurrent peak reverse voltage V RRM 20 30 40 V Maximum RMS voltage V RMS 14 21 28 V Maximum DC blocking voltage VDC 20 30 40 V Maximum average forw ard rectified current @TA =90 IF(AV) 1.0 A IFSM 25 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 1.0A z (Note 1) @ 3.0A Maximum reverse current @TA =25 at rated DC blocking voltage @TA =100 Typical junction capacitance (Note2) Typical thermal resistance VF 0.55 0.75 0.875 IR (Note3) Operating junction temperature range Storage temperature range NOTE: 1. Pulse test : 300 0.45 1.0 10.0 CJ 110 Rθ JA 80 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 s pulse width,1% duty cy cle. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient,vertical PC board mounting,0.5"(12.7mm)lead length. MDD ELECTRONIC 0.60 0.90 V mA pF /W RATINGS AND CHARACTERISTIC CURVES DL5817 THRU DL5819 AMPERES 0.75 Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0.5 0.25 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT AMPERES FIG.2 -- PEAK FORWARD SURGE CURRENT 1.0 30 25 TJ=TJMAX 8.3ms Single Half Sine-Wave 20 25 10 5 0 1 10 100 AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL INSTANTANEOUS FORWARD X -CHARACTERISTICS FIG.4 -- TYPICAL JUNCTION CAPACITANCE 20 400 DL 5817 DL 5819 DL 5818 1 T J = 25 P ulse w id th= 300 1 % D uty C yc le s CAPACITANCE, pF 10 AMPERES INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT FIG.1 -- FORWARD DERATING CURVE TJ=25℃ f=1.0MHz Vsig=50mVp-p 100 10 .1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS MDD ELECTRONIC 0.1 1 10 REVERSE VOLTAGE,VOLTS 100