CHENDA ES3A_13

ES3A THRU ES3J
SURFACE MOUNT SUPER FAST RECTIFIER
Forward Current - 3.0 Amperes
Reverse Voltage - 50 to 600 Volts
FEATURES
DO-214AB/SMC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
0.103(2.62)
0.079(2.06)
0.060(1.52)
0.030(0.76)
Case : JEDEC DO-214AB molded plastic body over passivated chip
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight :0.007 ounce, 0.25grams
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
VRRM
VRMS
VDC
ES3A ES3B ES3C
50
35
50
100
70
100
150
105
150
200
140
200
ES3G
ES3J
UNITS
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
300
210
300
I(AV)
3.0
Amps
IFSM
100.0
Amps
VF
0.95
1.25
5.0
100.0
IR
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
ES3D ES3E
1.7
Volts
µA
trr
35
ns
CJ
45.0
47.0
-50 to +150
pF
C/W
C
RθJA
TJ,TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
FIG. 1- FORWARD CURRENT DERATING CURVE
3.0
2.4
1.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1.2
0.6
0
0
25
50
75
100
125
150
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
RATINGS AND CHARACTERISTIC CURVES ES3A THRU ES3J
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
80
60
40
20
175
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
10
AMBIENT TEMPERATURE, C
20
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
ES3A-ES3D
ES3E-ES3G
ES3J
0.01
0
0.4
0.8
1.2
1.6
1.8
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
1,000
100
10
TJ=100 C
1
TJ=25 C
0.1
0.01
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0
20
40
60
80
100
10
TJ=25 C
TRANSIENT THERMAL IMPEDANCE,
C/W
200
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
1
0.1
1.0
10
100
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
100
NUMBER OF CYCLES AT 60 Hz
100
REVERSE VOLTAGE,VOLTS
MDD ELECTRONIC
t,PULSE DURATION,sec.
100