CHENMKO ENTERPRISE CO.,LTD CHIMH60PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * * * * SC-74/SOT-457 Low colloector-emitter saturation. High saturation current capability. Two CHDTC323T chips in one package. Built in bias resistor(R1=2.2kΩ, Typ. ) (1) (6) 0.95 1.7~2.1 2.7~3.1 0.95 MARKING (3) * I60 (4) 0.25~0.5 1.4~1.8 0.935~1.3 0.08~0.2 4 CIRCUIT 0~0.15 0.3~0.6 6 2.6~3.0 R1 R1 3 1 SC-74/SOT-457 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 30 V VCEO Collector-Emitter voltage 15 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 600 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 TJ Junction temperature −55 ∼ +150 RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point 140 O C O C O C/W Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-06 RATING CHARACTERISTIC ( CHIMH60PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 30 − − V 15 − − V IE=50uA 5.0 − − V Collector cutoff current VCB=20V − − 0.5 uA Emitter cutoff current VEB=4V − − 0.5 uA VCE(sat) Collector-emitter saturation voltage IC/IB=50mA/2.5mA − 0.08 V hFE DC current gain IC=50mA; VCE=5.0V 100 0.04 250 R1 fT Input resistor Transition frequency 1.64 − 2.2 200 2.86 − BVCBO Collector-base breakdown voltage BVCEO Collector-emitter breakdown voltage IC=1.0mA BVEBO Emitter-base breakdown voltage ICBO IEBO Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=50uA IE=-50mA, VCE=10.0V f=100MHz 600 KΩ MHz RATING CHARACTERISTIC CURVES ( CHIMH60PT ) Typical Electrical Characteristics Fig.2 Collector-emitter voltage vs. collector current 1k VCE = 5V DC CURRENT GAIN : hFE 500 200 100 Ta=100OC 25OC -40OC 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m COLLECTOR CURRENT : IC (A) COLLECsaturationTOR VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1 lO/lI=20 500m 200m Ta=100OC 25OC -40 OC 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (uA)