2N2646 – 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Tj=125°C unless otherwise noted Symbol Ratings 2N2646 – 2N2647 Unit 30 50 2 35 300 -65 to +125 -65 to +150 V mA A V mW °C °C VB2E Ie Emitter-Base2 Voltage RMS Emitter Current Peak Pulse Emitter Current * ie Interbase Voltage VB2B1 PD RMS power Dissipation TJ Junction Temperature TStg Storage Temperature Capacitor discharge – 10µF or less, 30volts or less. ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol η RBBO VEB1(sat) IB2(MOD) IEO V(BR)B1E IV IP Ratings Intrinsic stand-off ratio VB2B1 = 10V Interbase Resistance , VB2B1 = 3V Emitter Saturation Voltage VB2B1 = 10V , IE = 50 mA Modulated Interbase Current VB2B1 = 10V , IE = 50 mA Emitter Revers Current VB2E = 30 V , IB1 = 0 Base 1 Emitter breakdown Voltage IE =100 µA Valley Current , VB2B1 = 20 V Peak Current , VB2B1 = 25 V 2N2646 2N2647 2N2646 2N2647 2N2646 2N2647 24/09/2012 Min. Typ. Max. Unit 0.56 0.68 4.7 - 0.75 0.82 9.1 KΩ - - 2.5 V - 15 - V - - 12 µA 30 - - V 4 8 - - 5 2 - mA µA 1|2 COMSET SEMICONDUCTORS 2N2646 – 2N2647 MECHANICAL DATA CASE TO-18 (Case 22A-01 – Style 1) Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com [email protected] 24/09/2012 2|2 COMSET SEMICONDUCTORS