COMSET 2N3110

NPN 2N3108 – 2N3110
GENERAL PURPOSE AMPLIFIERS
AND SWITCHES
C
The 2N3108 and 2N3110 are NPN transistors mounted in
TO-39 metal package.
They are intended for large signal, low noise industrial applications.
Compliance to RoHS.
B
E
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
TStg
Value
Ratings
Collector-Emitter
IB =0
Voltage
Collector-Base Voltage IE =0
Emitter-Base Voltage
IC =0
Collector Current
T
= 25°
Total Power Dissipation amb
Tcase = 25°
Junction Temperature
Storage Temperature range
Unit
2N3108
2N3110
60
40
V
100
80
V
V
A
5
1
0.8
5
-65 to +150
-65 to +150
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-a
Thermal Resistance, Junction to ambient
219
°C/W
RthJ-c
Thermal Resistance, Junction to case
35
°C/W
COMSET SEMICONDUCTORS
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NPN 2N3108 – 2N3110
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff Current
VCB = 60 V, IE = 0
Tamb = 150°C
-
-
10
µA
ICES
Collector Cutoff Current
VCE = 60 V, VBE = 0
-
-
10
nA
IEBO
Emitter Cutoff Current
VBE = 5.0 V, IC = 0
-
-
10
nA
100
80
60
40
-
-
IE = 100 µA, IC = 0
7
-
-
IC = 150 mA, IB = 15 mA
IC = 1 A, IB = 100 mA
IC = 150 mA, IB = 15 mA
IC = 1 A, IB = 100 mA
IC = 150 mA, VCE = 1 V
IC = 0.1 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
Tamb = -55°C
IC = 50 mA, VCE = 10 V
f = 20MHz
IC = 0, VEB = 0.5 V
f = 1MHz
IE = ie =0, VCB = 10 V 2N3108
f = 1MHz
2N3110
40
20
25
-
0.25
1
1.1
2
120
-
15
-
-
60
-
-
MHz
-
-
80
pF
-
-
20
25
pF
VCBO
VCEO
VEBO
VCE(SAT)
VBE(SAT)
hFE
Collector-Base
Breakdown Voltage
Collector-emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
DC Current Gain
Transition frequency
fT
CEBO
CCBO
Emitter-Base
Capacitance
Collector-Base
Capacitance
IC = 100 µA, IE = 0
IC = 30 mA, IB = 0
2N3108
2N3110
2N3108
2N3110
V
V
V
V
V
-
SWITCHING TIMES
Symbol
Ratings
ton
Turn-on time
toff
Turn-off time
08/08/2012
IC = 150 mA; IB1 = 7.5 mA,
VCC = 20 V
IC = 150 mA
IB1 = -IB2 = 7.5 mA
VCC = 20 V
COMSET SEMICONDUCTORS
Value
Unit
200
ns
600
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NPN 2N3108 – 2N3110
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
Emitter
Pin 2 :
Base
Pin 3 :
Collector
Case :
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
08/08/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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